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Daniel Kropman

https://etis.ee/CV/Daniel_Kropman/est
17.04.1931
6727870
daniel.kropman@mail.ee

Teenistuskäik

Töökohad ja ametid
Tallinna Tehnikaülikool 2005-,vanem teadur.
2009–2011   
Tallinna Ülikool, Matemaatika ja Loodusteaduste Instituut, Teadur (0,25)
2005–31.12.2013   
Tallinna Tehnikaülikool, Keemia ja materjalitehnoloogia teaduskond, Materjaliteaduse instituut, Pooljuhtmaterjalide tehnoloogia õppetool, erakorraline vanemteadur (0,50)
1993–2005   
Eesti Mereakadeemia (alates aug. 2014 TTÜ Eesti Mereakadeemia), Dotsent (1,00)
01.01.1960–31.12.1992   
Tondi Elektroonika, Insener,labori ja büroo juhataja,grupijuht
 
 
Haridustee
Tartu Ülikool,Füüsikateaduskond,1960a.
1965–1968   
Tartu Ülikool,aspirantuur

Kvalifikatsioon

Teaduskraadid
Daniel Kropman, doktorikraad, 1978, (juh) , Mittehomogeensuste mõju pooljuhtide ja MDP struktuuride omadustele., Pooljuhtide Instituut, Kiiev,1978.
 
 
Teadustöö põhisuunad
ETIS KLASSIFIKAATOR: 4. Loodusteadused ja tehnika; 4.10. Füüsika; TÄPSUSTUS: .
 
 
Lisainfo
Füüsika Matemaatika teaduste kandidaat
Pooljuhtide Instituut, Kiiev,1978a.

Lõppenud projektid

Publikatsioonid

Klass
Aasta
Publikatsioon
 
1.1.
2011
Kropman, D.; Mellikov, E.; Kärner, T.; Laas, T.; Medvid, A.; Onufrijevs, P.; Dauksta, E. (2011). Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties. Solid State Phenomena, 178-179, 259−262.
3.1.
2011
Kropman, Daniel; Karner, Tiit; Dolgov, Sergei; Heinmaa, Ivo; Laas, Tonu; Londos, Charalampos (2011). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties. physica status solidi (c), 8 (3), 694−696. DOI: 10.1002/pssc.201000269.
3.1.
2011
Kropman, D.; Mellikov, E.; Kärner, T.; Heinmaa, I.; Laas, T.; Londos, C.A.; Misiuk, A. (2011). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties. Solid State Phenomena, 178-179, 263−266. DOI: 10.4028/www.scientific.net/SSP.178-179.263.
1.1.
2010
Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A.; Skroupa, W.; Prucnal, S.; Rebohle, L.; Zvyagin, S.; Cizmar, E.; Ozerov, M.; Woznitsa, J. (2010). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface. Thin Solid Films, 518 (9), 2374−2376. DOI: 10.1016/j.tsf.2009.09.011.
3.1.
2010
Kropman, D.; Mellikov, E.; Lott, K.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A.; Skorupa, W.; Prucnal, S.; Zvyagin, S.; Cizmar, E.; Ozerov, M.; Woznitsa, J. (2010). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface. Gettering and Defect Engineering in Semiconductor Technology XIII, 145−148.
3.4.
2010
Kropman, D.; Kärner, T.; Dolgov, Sergei; Heinmaa, I.; Laas, T.; Londos, C. A. (2010). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties. The 9th International Conference on Global Research and Education. Riga, Latvia, 231−233.
1.1.
2009
Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Volobueva, O.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A. (2009). Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties. Physica B Condensed Matter, 404, 5153−5155.
1.1.
2008
Kropman, D.; Mellikov, E.; Kärner, T.; Ugaste, Ü.; Laas, T.; Heinmaa, I.; Abru, U., Medvid, A. (2008). Hydrogen interaction with point defects in the Si-SiO2 structures and its influence on the interface properties. Solid State Phenomena, 131-133, 345−349.
5.2.
2008
Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Volobueva, O.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A. (2008). Strain Relaxation Mechanism in the Si-SiO2 System and its Influence on the Interface Properties. Technologia. Kaunas 2008: Radiation Interaction with Materials and its use in Technologies. Kaunas, 24-27.09.2008. Ed. Grigonis, A. Kaünas: Lithuanian Academy of Sciences, 204−207.
5.1.
2007
Kropman, D.; Mellikov, E.; Kärner, T.; Heinmaa, I.; Ugaste, Ü.; Laas, T.; Medvid, A. (2007). Hydrogen interaction with point defects in the Si-SiO2 system and its influence on the interface properties. 11th International Conference on the Formation of Semiconductor Interfaces. From Semiconductors to Nanoscience, and Applications with Biology. Program and Abstracts: 11th International Conference on the Formation of Semiconductor Interfaces, Manaus, Brasiilia, 19.-24. August 2007. Manaus, Amazonas, Brasiilia, 122.
1.1.
2006
Kropman, D.; Mellikov, E.; Kärner, T.; Ugaste, Ü.; Laas, T.; Heinmaa, I.; Medvid, A. (2006). Impurity interaction with point defects in the Si-SiO2 structures and its influence on the interface properties. Materials Science and Engineering B, 134, 222−226.
1.1.
2005
Kropman, D.; Abru, U.; Karner, T.; Ugaste, U.; Mellikov, E.; Kauk, M.; Heinmaa, I.; Samoson, A.; Medvid, A. (2005). Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties. Gettering and Defect Engineering in Semiconductor Technology XI: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005), Giens, FRANCE, SEP 25-30, 2005. Ed. Pichaud B.; Claverie, A.; Alquier, D.; Richter, H.; Kittler, M. Trans Tech Publications Ltd, 333−338. (Solid State Phenomena; 108-109).
1.1.
2004
Kropman, D.; Karner, T.; Abru, U.; Ugaste, U.; Mellikov, E (2004). Interaction between point defects, extended defects and impurities in the Si-sio2 system during the process of its formation. Thin Solid Films, 459, 53−57.
1.1.
2004
Kropman, D.; Karner, T.; Abru, U.; Ugaste, U.; Mellikov, E.; Kauk, M. (2004). Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formation. Materials Science and Engineering B, 114-115, 295−298.
3.4.
2004
Kropman, D.; Kärner, T.; Abru, U.; Ugaste, Ü.; Mellikov, E. (2004). Point defects Interaction with Extended Defects in the Si-SiO2 System. Proceedings of IVC-16,: June 2004, Venice. , SS1-TuP394 .
1.1.
2003
Kropman, D.; Poll, V.; Kärner, T.; Ugaste, U.; Mellikov, E.; Abru, U.; Paomets, V. (2003). Investigation of the strain relaxation mechanism in the Si-SiO2 system during the process of its formation. physica status solidi (a), 198 (2), 297−301.
1.1.
2002
Kropman, D.; Karner, T.; Samoson, A.; Heinmaa, I.; Ugaste, U.; Mellikov, E. (2002). Interaction between point defects in the Si-SiO2 system during the process of its formation. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Ato, 186, 78−82.
1.1.
2001
Kropman, D.; Karner, T.; Abru, U.; Strik, M.; Ugaste, U.; Mellikov, E. (2001). Interaction of point defects with extended defects in the Si-SiO2 system during its formation process. Diffusions in Materials: Dimat2000, Pts 1 & 2, 194-1, 1737−1742.
1.1.
2000
Kropman, D.; Kärner, T.; Abru, U.; Strik, M.; Ugaste, Ülo (2000). Point defects interaction with extended defects in the Si-SiO2 system during the process of its formation. In: Fifth International conference on diffusion in materials DIMAT 2000. July 17-21, 2000, Paris, France : abstracts (p. 147−0).. Paris,: -.
1.1.
2000
Kropman, D.; Abru, U.; Karner, T. (2000). Defect structure relaxation process in the Si-SiO2 system. Applied Surface Science, 166, 475−479.
3.4.
2000
Kropman, D.; Abru, U.; Kärner, Tiit; Ugaste, Ülo (2000). Point defects generation and redistribution in SiSiO2 system during the process of its formation. Mass and charge transport in inorganic materials : fundamentals to devices ; proceedings of the International Conference on "Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices", Lido di Jesolo, Venice, Italy, May 28 - June 2, 2000: International Conference on "Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices" ; (Venice, Italy) : 2000.05.28-06.02. _EditorsAbbr P.Vincenzini, V.Buscaglia. Faenza: Techna, 491−496. (Advances in Science and Technology; 29).
1.1.
1999
Kropman, D.; Poll, V.; Tambek, L.; Karner, T.; Abru, U.; Strik, M. (1999). Impurity gettering investigation in the Si-SiO2 system. Solid State Phenomena, 70, 267−272.
1.1.
1999
Kropman, D.; Abru, U.; Samoson, A.; Karner, T. (1999). On the kinetics of generation of point defects in the Si-SiO2 system. Thin Solid Films, 344, 412−415.
1.1.
1998
Kropman, D.; Poll, V.; Tambek, L.; Karner, T.; Abru, U. (1998). Effect of ultrasonic treatment on the defect structure of the Si-SiO2 system. Ultrasonics, 36 (10), 1021−1025.
1.1.
1997
Kropman, D.; Dolgov, S.; Karner, T. (1997). On point defect gettering by back-side damage in the Si-SiO2 system. Defect and Diffusion Forum, 143, 1027−1030.
1.1.
1996
Kropman, D.; Dolgov, S.; Karner, T. (1996). On the kinetics of the generation of point defects in the Si-SiO2 system. Applied Physics A-Materials Science & Processing, 62 (5), 469−472.
1.1.
1993
Kropman, D.; Karner, T. (1993). Esr investigation of the si-sio2 system. physica status solidi (a), 136 (1), 125−129.
22.04.2019

Daniel Kropman

https://etis.ee/CV/Daniel_Kropman/eng
17.04.1931
6727870
daniel.kropman@mail.ee

Career

Institutions and positions
2009–2011   
Tallinn University, Institute of Mathematics and Natural Sciences, Researcher (0,25)
2005–31.12.2013   
Tallinn University of Technology , Faculty of Chemical and Materials Technology, Department of Materials Science, Chair of Semiconductor Materials Technology , Extraordinary Senior Researcher (0,50)
1993–2005   
Estonian Maritime Academy, Associate Professor (1,00)
01.01.1960–31.12.1992   
Tondi Elektronics,engineer,head of laboratory,head of the research group.
 
 
Education
1960 graduated from Tartu University as physicist.

Qualifications

Academic degrees
Daniel Kropman, Doctor's Degree, 1978, (sup) , Mittehomogeensuste mõju pooljuhtide ja MDP struktuuride omadustele. (Mittehomogeensuste mõju pooljuhtide ja MDP struktuuride omadustele.), Pooljuhtide Instituut, Kiiev,1978.
 
 
Fields of research
ETIS CLASSIFICATION: 4. Natural Sciences and Engineering; 4.10. Physics and Technical Physics
 
 
Additional information
Cand.of Science
Institute of Semiconductors,Kiev,1978

Completed projects

Publications

Category
Year
Publication
 
1.1.
2011
Kropman, D.; Mellikov, E.; Kärner, T.; Laas, T.; Medvid, A.; Onufrijevs, P.; Dauksta, E. (2011). Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties. Solid State Phenomena, 178-179, 259−262.
3.1.
2011
Kropman, Daniel; Karner, Tiit; Dolgov, Sergei; Heinmaa, Ivo; Laas, Tonu; Londos, Charalampos (2011). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties. physica status solidi (c), 8 (3), 694−696. DOI: 10.1002/pssc.201000269.
3.1.
2011
Kropman, D.; Mellikov, E.; Kärner, T.; Heinmaa, I.; Laas, T.; Londos, C.A.; Misiuk, A. (2011). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties. Solid State Phenomena, 178-179, 263−266. DOI: 10.4028/www.scientific.net/SSP.178-179.263.
1.1.
2010
Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A.; Skroupa, W.; Prucnal, S.; Rebohle, L.; Zvyagin, S.; Cizmar, E.; Ozerov, M.; Woznitsa, J. (2010). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface. Thin Solid Films, 518 (9), 2374−2376. DOI: 10.1016/j.tsf.2009.09.011.
3.1.
2010
Kropman, D.; Mellikov, E.; Lott, K.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A.; Skorupa, W.; Prucnal, S.; Zvyagin, S.; Cizmar, E.; Ozerov, M.; Woznitsa, J. (2010). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface. Gettering and Defect Engineering in Semiconductor Technology XIII, 145−148.
3.4.
2010
Kropman, D.; Kärner, T.; Dolgov, Sergei; Heinmaa, I.; Laas, T.; Londos, C. A. (2010). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties. The 9th International Conference on Global Research and Education. Riga, Latvia, 231−233.
1.1.
2009
Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Volobueva, O.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A. (2009). Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties. Physica B Condensed Matter, 404, 5153−5155.
1.1.
2008
Kropman, D.; Mellikov, E.; Kärner, T.; Ugaste, Ü.; Laas, T.; Heinmaa, I.; Abru, U., Medvid, A. (2008). Hydrogen interaction with point defects in the Si-SiO2 structures and its influence on the interface properties. Solid State Phenomena, 131-133, 345−349.
5.2.
2008
Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Volobueva, O.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A. (2008). Strain Relaxation Mechanism in the Si-SiO2 System and its Influence on the Interface Properties. Technologia. Kaunas 2008: Radiation Interaction with Materials and its use in Technologies. Kaunas, 24-27.09.2008. Ed. Grigonis, A. Kaünas: Lithuanian Academy of Sciences, 204−207.
5.1.
2007
Kropman, D.; Mellikov, E.; Kärner, T.; Heinmaa, I.; Ugaste, Ü.; Laas, T.; Medvid, A. (2007). Hydrogen interaction with point defects in the Si-SiO2 system and its influence on the interface properties. 11th International Conference on the Formation of Semiconductor Interfaces. From Semiconductors to Nanoscience, and Applications with Biology. Program and Abstracts: 11th International Conference on the Formation of Semiconductor Interfaces, Manaus, Brasiilia, 19.-24. August 2007. Manaus, Amazonas, Brasiilia, 122.
1.1.
2006
Kropman, D.; Mellikov, E.; Kärner, T.; Ugaste, Ü.; Laas, T.; Heinmaa, I.; Medvid, A. (2006). Impurity interaction with point defects in the Si-SiO2 structures and its influence on the interface properties. Materials Science and Engineering B, 134, 222−226.
1.1.
2005
Kropman, D.; Abru, U.; Karner, T.; Ugaste, U.; Mellikov, E.; Kauk, M.; Heinmaa, I.; Samoson, A.; Medvid, A. (2005). Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties. Gettering and Defect Engineering in Semiconductor Technology XI: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005), Giens, FRANCE, SEP 25-30, 2005. Ed. Pichaud B.; Claverie, A.; Alquier, D.; Richter, H.; Kittler, M. Trans Tech Publications Ltd, 333−338. (Solid State Phenomena; 108-109).
1.1.
2004
Kropman, D.; Karner, T.; Abru, U.; Ugaste, U.; Mellikov, E (2004). Interaction between point defects, extended defects and impurities in the Si-sio2 system during the process of its formation. Thin Solid Films, 459, 53−57.
1.1.
2004
Kropman, D.; Karner, T.; Abru, U.; Ugaste, U.; Mellikov, E.; Kauk, M. (2004). Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formation. Materials Science and Engineering B, 114-115, 295−298.
3.4.
2004
Kropman, D.; Kärner, T.; Abru, U.; Ugaste, Ü.; Mellikov, E. (2004). Point defects Interaction with Extended Defects in the Si-SiO2 System. Proceedings of IVC-16,: June 2004, Venice. , SS1-TuP394 .
1.1.
2003
Kropman, D.; Poll, V.; Kärner, T.; Ugaste, U.; Mellikov, E.; Abru, U.; Paomets, V. (2003). Investigation of the strain relaxation mechanism in the Si-SiO2 system during the process of its formation. physica status solidi (a), 198 (2), 297−301.
1.1.
2002
Kropman, D.; Karner, T.; Samoson, A.; Heinmaa, I.; Ugaste, U.; Mellikov, E. (2002). Interaction between point defects in the Si-SiO2 system during the process of its formation. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Ato, 186, 78−82.
1.1.
2001
Kropman, D.; Karner, T.; Abru, U.; Strik, M.; Ugaste, U.; Mellikov, E. (2001). Interaction of point defects with extended defects in the Si-SiO2 system during its formation process. Diffusions in Materials: Dimat2000, Pts 1 & 2, 194-1, 1737−1742.
1.1.
2000
Kropman, D.; Kärner, T.; Abru, U.; Strik, M.; Ugaste, Ülo (2000). Point defects interaction with extended defects in the Si-SiO2 system during the process of its formation. In: Fifth International conference on diffusion in materials DIMAT 2000. July 17-21, 2000, Paris, France : abstracts (p. 147−0).. Paris,: -.
1.1.
2000
Kropman, D.; Abru, U.; Karner, T. (2000). Defect structure relaxation process in the Si-SiO2 system. Applied Surface Science, 166, 475−479.
3.4.
2000
Kropman, D.; Abru, U.; Kärner, Tiit; Ugaste, Ülo (2000). Point defects generation and redistribution in SiSiO2 system during the process of its formation. Mass and charge transport in inorganic materials : fundamentals to devices ; proceedings of the International Conference on "Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices", Lido di Jesolo, Venice, Italy, May 28 - June 2, 2000: International Conference on "Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices" ; (Venice, Italy) : 2000.05.28-06.02. _EditorsAbbr P.Vincenzini, V.Buscaglia. Faenza: Techna, 491−496. (Advances in Science and Technology; 29).
1.1.
1999
Kropman, D.; Poll, V.; Tambek, L.; Karner, T.; Abru, U.; Strik, M. (1999). Impurity gettering investigation in the Si-SiO2 system. Solid State Phenomena, 70, 267−272.
1.1.
1999
Kropman, D.; Abru, U.; Samoson, A.; Karner, T. (1999). On the kinetics of generation of point defects in the Si-SiO2 system. Thin Solid Films, 344, 412−415.
1.1.
1998
Kropman, D.; Poll, V.; Tambek, L.; Karner, T.; Abru, U. (1998). Effect of ultrasonic treatment on the defect structure of the Si-SiO2 system. Ultrasonics, 36 (10), 1021−1025.
1.1.
1997
Kropman, D.; Dolgov, S.; Karner, T. (1997). On point defect gettering by back-side damage in the Si-SiO2 system. Defect and Diffusion Forum, 143, 1027−1030.
1.1.
1996
Kropman, D.; Dolgov, S.; Karner, T. (1996). On the kinetics of the generation of point defects in the Si-SiO2 system. Applied Physics A-Materials Science & Processing, 62 (5), 469−472.
1.1.
1993
Kropman, D.; Karner, T. (1993). Esr investigation of the si-sio2 system. physica status solidi (a), 136 (1), 125−129.
22.04.2019

Otsi projekti

  • {{item.Name}}
Asutus on projekti finantseerija   Asutus on projekti teostaja  
  • {{searchListItem.Name}}
Kõik   Tavaprojektid   Ülemprojektid   Alamprojektid  
Uus Frascati (2015)
Uus ja vana Frascati (otsing uue järgi väljastab ka seotud vanad)
Kõik
Käimasolevad
Lõppenud
Algus
Hajus
Täpne
Lihtotsing Tühjenda
  • Leitud 7 kirjet
ProgrammLiikNumberNimiProjekti algusProjekti lõppVastutav täitjaAsutusFinantseerijapoolne rahastamine
TKTK117Kõrgtehnoloogilised materjalid jätkusuutlikuks arenguks01.01.201131.12.2015Enn LustTartu Ülikool; Tallinna Tehnikaülikool, Keemia ja materjalitehnoloogia teaduskond; Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut; Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Keemia Instituut2 870 086,58 EUR
SFSF0132723s06Mittelineaarsed stohhastilised protsessid nano- ja ökosüsteemides: teooria ning rakendused materjaliteadustes ja ökoloogias.01.01.200631.12.2011Romi MankinTallinna Ülikool, Matemaatika ja Loodusteaduste Instituut409 140,81 EUR
ETFETF6179Monoterakihilised päikesepatareid01.01.200531.12.2008Enn MellikovTallinna Tehnikaülikool, Keemia ja materjalitehnoloogia teaduskond44 569,73 EUR
SFSF0142516s03Pooljuhtpäikeseenergeetika materjalide keemia, füüsika ja tehnoloogia01.01.200331.12.2007Enn MellikovTallinna Tehnikaülikool, Keemia ja materjalitehnoloogia teaduskond753 070,95 EUR
ETFETF5727Süsteemi Si-SiO2 punktdefektide identifitseerimine ja nende mõju uurimine süsteemi omadustele01.01.200431.12.2006Daniel KropmanTondi Elektroonika AS5 562,57 EUR
IUTIUT19-28Uued materjalid ja tehnoloogiad päikeseenergeetikale01.01.201431.12.2019Maarja GrossbergTallinna Tehnikaülikool, Keemia ja materjalitehnoloogia teaduskond, Materjaliteaduse instituut, Pooljuhtmaterjalide tehnoloogia õppetool; Tallinna Tehnikaülikool, Inseneriteaduskond, Materjali- ja keskkonnatehnoloogia instituut1 860 000,00 EUR
SFSF0140099s08Uued materjalid ja tehnoloogiad tuleviku päikeseenergeetikale01.01.200831.12.2013Maarja GrossbergTallinna Tehnikaülikool, Keemia ja materjalitehnoloogia teaduskond1 584 113,46 EUR