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Olen nõus

Ahti Niilisk

https://etis.ee/CV/Ahti_Niilisk/est
10.06.1937
737 4653
ahti.niilisk@ut.ee

Teenistuskäik

Töökohad ja ametid
2009–...   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, Kiletehnoloogia labor, Vanemteadur (0,70)
1961-1963 TA Füüsika ja Astronoomia Instituudi (FAI) nooremteadur, 1963-1966 FAI aspirant, 1966-1967 FAI nooremteadur, 1967-1970 FAI peainsener, 1970-1971 FAI vaneminsener, 1971-1972 FAI nooremteadur, 1972-1973 FAI vanemteadur, 1973-1990 TA Füüsikainstituudi (FI) vanemteadur, 1990-2003 FI (alates dets. 1997 TÜ FI) teadur, 2003-tänini TÜ FI erakorraline vanemteadur.
1980 Poola TA Uurimistsenter "Unipress", külalisteadur;
2003 Havai Ülikool (USA) külalis-stipendiaat;
1977 - vanemteaduri kutse (pooljuhtide ja dielektrikute füüsika) NSVL TA-lt
01.02.2016–31.03.2019   
Tartu Ülikool, Loodus- ja täppisteaduste valdkond, füüsika instituut, konsultant (0,60)
01.01.2013–31.12.2015   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, materjaliteaduse vanemteadur (0,70)
01.01.2010–31.12.2012   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, vanemteadur (0,70)
01.09.2009–31.12.2009   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,70)
01.04.2009–31.08.2009   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,60)
01.02.2009–31.03.2009   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,50)
01.01.2008–31.01.2009   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,40)
01.01.2008–31.12.2008   
Perugia Ülikool (Itaalia), külalisteadur
01.06.2007–31.12.2007   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,80)
01.02.2007–31.05.2007   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,50)
01.01.2007–31.01.2007   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,80)
2007–2007   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, Erakorraline vanemteadur (0,50)
2007–2008   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, Erakorraline vanemteadur (0,80)
01.09.2005–31.12.2006   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,80)
2005–2007   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, Erakorraline vanemteadur (0,80)
01.01.2005–31.08.2005   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,30)
2003–2005   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, Erakorraline vanemteadur (0,90)
2003–2004   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,50)
 
 
Haridustee
1955–1960   
Tartu Riiklik Ülikool
 
 
Teadusorganisatsiooniline ja -administratiivne tegevus
1995−2006   
Eesti Füüsikaseltsi liige;
1993−2006   
Osalus teadusliku aparatuuriehituse firma Evikon (Tartu teaduspark) loomisel ja arendamisel

Kvalifikatsioon

Teaduskraadid
Ahti Niilisk, doktorikraad, 1971, (juh) Jakov Kirs, Luminescence of the impurity centers in alkali halide crystals under high hydrostatic pressure, Tartu Ülikool.
 
 
Teaduspreemiad ja tunnustused
1982, Ahti Niilisk, 1982 ENSV riiklik teaduspreemia (kollektiivi koosseisus) 2012 Tartu Ülikooli väike medal 2017 Tartu Ülikooli aumärk
 
 
Teadustöö põhisuunad
ETIS KLASSIFIKAATOR: 4. Loodusteadused ja tehnika; 4.12. Protsessitehnoloogia ja materjaliteadus; CERCS KLASSIFIKAATOR: T150 Materjalitehnoloogia; TÄPSUSTUS: Õhukeste oksiidkilede ja grafeeni ramanuuringud
ETIS KLASSIFIKAATOR: 4. Loodusteadused ja tehnika; 4.10. Füüsika; TÄPSUSTUS: Õhukeste oksiidkilede kasvuprotsessid ja nende reaalajaline optiline seire aatomkiht-sadestamisel; Õhukeste oksiidkilede struktuuranalüüs ja elastsusomadused optiliste meetoditega (Raman- ja Brillouini hajumine)

Lõppenud projektid

Juhendatud väitekirjad

Publikatsioonid

Klass
Aasta
Publikatsioon
 
1.1.
2016
Kodu, Margus; Berholts, Artjom; Kahro, Tauno; Avarmaa, Tea; Kasikov, Aarne; Niilisk, Ahti; Alles, Harry; Jaaniso, Raivo (2016). Highly sensitive NO2 sensors by pulsed laser deposition on graphene. Applied Physics Letters, 109, 113108.10.1063/1.4962959.
1.1.
2016
Lilloja, J.; Kibena-Põldsepp, E.; Merisalu, M.; Rauwel, P.; Matisen, L.; Niilisk, A.; Cardoso, E.S.F.; Maia, G.; Sammelselg, V.; Tammeveski, K. (2016). An oxygen reduction study of graphene-based nanomaterials of different origin. Catalysts, 6 (7), 108. DOI: 10.3390/catal6070108.
1.1.
2016
Niilisk, Ahti; Kozlova, Jekaterina; Alles, Harry; Aarik, Jaan; Sammelselg, Väino (2016). Raman characterization of stacking in multi-layer graphene grown on Ni. Carbon, 98, 658−665. DOI: 10.1016/j.carbon.2015.11.050.
5.2.
2016
Ahti, Niilisk;Jekaterina, Kozlova; Harry, Alles; Jaan, Aarik; Väino, Sammelselg (2016).

Stacking modes in multilayer graphene grown on Ni: Raman characterization

. Abstract Book: Graphene Week 2016, Warsaw,Poland,13-17 June 2016. Ed. Graphene Flagship. Warsaw: Warsaw University Press, 366.
5.2.
2016
Kodu, Kodu; Berholts, Artjom; Kahro, Tauno; Veinla, Markus; Avarmaa, Tea; Niilisk, Ahti; Alles, Harry; Jaaniso, Raivo (2016).

Laser deposition on graphene – a versatile method for developing environmental sensors

. E-MRS Spring Meeting 2016, Lille Grand Palais - France, 2-6. 05.2016. emrs, X11−X11.
1.1.
2015
Möldre, Kristel; Aarik, Lauri; Mändar, Hugo; Niilisk, Ahti; Rammula, Raul; Tarre, Aivar; Aarik, Jaan. (2015). Atomic layer deposition of rutile and TiO2-II from TiCl4 and O3 on sapphire: Influence of substrate orientation on thin film structure. Journal of Crystal Growth, 428, 86−92.10.1016/j.jcrysgro.2015.07.029.
1.1.
2015
Niilisk, Ahti; Kahro, Tauno; Kiisk, Valter; Rähn, Mihkel; Alles, Harry; Aarik, Jaan; Sammelselg, Väino (2015). Raman modes in transferred bilayer CVD graphene. Open Physics, 13 (1), 34−40. DOI: 10.1515/phys-2015-0003.
1.1.
2015
Kozlova, J.; Niilisk, A.; Alles, H.; Sammelselg, V. (2015). Discontinuity and misorientation of graphene grown on nickel foil: Effect of the substraate crystallographic orientation. Carbon, 94, 160−173. DOI: 10.1016/j.carbon.2015.06.023.
1.1.
2015
Merisalu, Maido; Kahro, Tauno; Kozlova, Jekaterina; Niilisk, Ahti; Nikolajev, Aleksandr; Marandi, Margus; Floren, Aare; Alles, Harry; Sammelselg, Väino (2015). Graphene-polypyrrole thin hybrid corrosion resistant coatings for copper. Synthetic Metals, 200, 16−23. DOI: 10.1016/j.synthmet.2014.12.024.
1.1.
2015
Mooste, M.; Kibena, E.; Kozlova, J.; Marandi, M.; Matisen, L.; Niilisk, A.; Sammelselg, V.; Tammeveski, K. (2015). Electrografting and morphological studies of chemical vapour deposition grown graphene sheets modified by electroreduction of aryldiazonium salts. Electrochimica Acta, 161, 195−204. DOI: 10.1016/j.electacta.2015.02.035.
1.1.
2015
J. Mondal, L. Aarik, J. Kozlova, A. Niilisk, H. Mändar, U. Mäeorg, A. Simões, V. Sammelselg (2015). Functionalization of Titanium Alloy Surface by Graphene Nanoplatelets and Metal Oxides: Corrosion Inhibition. Journal of Nanoscience and Nanotechnology, 15 (9), 6533−6540. DOI: 10.1166/jnn.2015.10775.
5.2.
2015
Kodu, Margus; Berholts, Artjom; Kahro, Tauno; Avarmaa, Tea; Niilisk, Ahti; Alles, Harry; Jaaniso, Raivo (2015). Gas Sensors Based on PLD-Modified Graphene for Environmental Monitoring. THIRD INTERNATIONAL ACTION WORKSHOP New Trends and Challenges for Air Quality Control, Riga, Latvia, 26-27 March 2015.
5.2.
2015
Berholts, Artjom; Kahro, Tauno; Kodu, Margus; Avarmaa, Tea; Niilisk, Ahti; Alles, Harry; Jaaniso, Raivo (2015). Functionalization of graphene by pulsed laser deposition: impact on gas sensitivity. Graphene Week 2015, Manchester, Suurbritannia, 22-26 June 2015. Graphene Flagship, 149.
1.1.
2014
Jaaniso, Raivo; Kahro, Tauno; Kozlova, Jekaterina; Aarik, Jaan; Aarik, Lauri; Alles, Harry; Floren, Aare; Gerst, Alar; Kasikov, Aarne; Niilisk, Ahti; Sammelselg, Väino (2014). Temperature induced inversion of oxygen response in CVD graphene on SiO2. Sensors and Actuators B-Chemical, 190, 1006−1013. DOI: 10.1016/j.snb.2013.09.068.
1.2.
2014
Mondal, J.; Marandi, M.; Kozlova, J.; Merisalu, M.; Niilisk, A.; Sammelselg, V. (2014). Protection and Functionalizing of Stainless Steel Surface by Graphene Oxide-Polypyrrole Composite Coating. Journal of Chemistry and Chemical Engineering, 8, 786−793. DOI: 10.17265/1934-7375/2014.08.005.
5.2.
2014
Niilisk, Ahti; Kahro, Tauno; Alles, Harry; Aarik, Jaan; Sammelselg, Väino (2014). Breathing modes in Raman of CVD grown twisted bilayer graphene. e-Abstract Book: Graphene Week 2014, Gothenburg, Sweden, 23-27 June 2014. Ed. Sergey Kubatkin, Jan Stake. Gothenburg: Chalmers University of Technology, 282−282.
1.1.
2013
Tarre, Aivar; Möldre, Kristel; Niilisk, Ahti; Mändar, Hugo; Aarik, Jaan; Rosental, Arnold (2013). Atomic layer deposition of epitaxial TiO2 II on c-sapphire. Journal of Vacuum Science & Technology A: Vacuum Surfaces and Films, 31 (1), 01A118-1−01A118-5.10.1116/1.4764892.
3.1.
2013
Rammula, Raul; Aarik, Lauri; Kasikov, Arne; Kozlova, Jekaterina; Kahro, Tauno; Matisen, Leonard; Niilisk, Ahti; Alles, Harry; Aarik, Jaan (2013). Atomic layer deposition of aluminum oxide films on graphene. IOP Conference Series: Materials Science and Engineering, 49, 012014.10.1088/1757-899X/49/1/012014.
5.2.
2013
Tamm, A.; Kahro, T.; Kozlova, J.; Aarik, L.; Kasikov, A.; Mändar, H.; Rammula, R.; Niilisk, A.; Möldre, K.; Tarre, A.; Alles, H.; Kukli, K.; Aarik, J. (2013). Aatomkihtsadestud dielektikute uurimine grafeeni sisaldavas struktuuris. EMRS-2013, SPRING 13 symposium N: Atomic-scale engineering of multifunctional nano-sized materials and films: EMRS-2013, Strasbourg, Prantsusmaa, mai 2013. x, x.
5.2.
2013
Möldre, Kristel; Tarre, Aivar; Adamson, Peep; Kahro, Tauno; Niilisk, Ahti; Aarik, Jaan (2013). Real-Time Optical Characterization of Atomic Layer Deposition of Dielectrics on Graphene. Book of Abstracts: International Conference "Functional Materials and Nanotechnologies 2013 - FM&NT2013"; Tartu, Estonia; April 21-24, 2013. _EditorsAbbr Plank, Toomas; Pärna, Rainer. Institute of Physics, University of Tartu, 223.
5.2.
2012
Arroval, Tõnis; Vetemäe, Lagle: Mändar, Hugo; Niilisk, Ahti; and Aarik, Jaan (2012). Comparison of TiO2 thin films grown by atomic layer deposition in TiCl4-H2O and TTIP-H2O processes. Book of Abstracts: The 12th International Conference on Atomic Layer Deposition "AVS-ALD & Baltic ALD 2012", Dresden, Germany, June 17-20, 2012. Ed. Uwe Schröder and Mato Knez. Namlab gGmbH, Dresden, 242.
5.2.
2012
Tarre, Aivar; Möldre, Kristel; Niilisk, Ahti; Mändar, Hugo; Aarik, Jaan; and Rosental, Arnold (2012). Atomic layer deposition of TiO2 II on α-Al2O3(001). Book of Abstracts: The 12th International Conference on Atomic Layer Deposition "AVS-ALD & Baltic ALD 2012", Dresden, Germany, June 17-20, 2012. Ed. Uwe Schröder and Mato Knez. Namlab gGmbH, Dresden, 240.
1.1.
2011
Alles, H.; Aarik, J.; Aidla, A.; Fay, A.; Kozlova, J.; Niilisk, A.; Pärs, M.; Rähn, M.; Wiesner, M.; Hakonen, P.; Sammelselg, V. (2011). Atomic layer deposition of HfO2 on graphene from HfCl4 and H2O. Central European Journal of Physics, 9 (2), 319−324. DOI: 10.2478/s11534-010-0040-x.
3.2.
2011
Alles, H.; Aarik, J.; Kozlova, J.; Niilisk, A.; Rammula, R.; Sammelselg, V. (2011). Atomic layer deposition of high-k oxides on graphene. In: Jian Ru Gong (Ed.). Graphene - Synthesis, Characterization, Properties and Applications (99−114). . INTECH.
1.1.
2010
Sammelselg, V.; Tarre, A.; Lu, J.; Aarik, J.; Niilisk, A.; Uustare, T.; Netšipailo, I.; Rammula, R.; Pärna, R.; Rosental, A. (2010). Structural characterization of TiO2–Cr2O3 nanolaminates grown by atomic layer deposition. Surface and Coatings Technology, 204, 2015−2018. DOI: 10.1016/j.surfcoat.2009.11.039.
5.2.
2010
Niilisk, A.; Aidla, A.; Kukli, K.; Mändar, H.; Matisen, L.; Saar, A.; Aarik, J. (2010). Raman characterization of Ru thin films growwn by ALD. Conference Program & Abstract Booklet: Baltic ALD 2010 & GerALD 2010; Bucerius Law School, Hamburg, Germany, September 16-17, 2010. Hamburg, Germany, P36.
5.2.
2010
Alles, H.; Aarik, J.; Aidla, A.; Fay, A.; Kozlova, J.; Niilisk, A.; Pärs, M.; Rähn, M.; Wiesner, M.; Hakonen, P.; Sammelselg, V. (2010). Atomic layer deposition of monoclinic HfO2 films on graphene. In: Proceedings of Graphene Week (electronical form): Graphene Week, Maryland, USA, April 19-23, 2010. W006.
3.1.
2009
Tarre, A.; Carlotti, G.; Gerst, A.; Mändar, H.; Niilisk, A.; Sammelselg, V.; Socino, G.; Rosental, A. (2009). C-plane chromia on c-plane sapphire. physica status solidi (c), 6 (6), 1472−1475. DOI: 10.1002/pssc.200881530.
5.2.
2009
Alles, H.; Aarik, J.; Aidla, A.; Niilisk, A.; Pärs, M.; Rähn, M.; Kozlova, J.; Sammelselg, V. (2009). Biaxial strain caused by atomic layer deposition of HfO2 and TiO2 thin films on graphene. Nanoscience Days October 29-30, 2009: Nanoscience Days 2009; Jyväskylä, Finland; October 29-30, 2009. Ed. Nanoscience Center. Finland: Jyväskylan yliopisto, 38.
5.2.
2009
Niilisk, A.; Alles, H.; Aarik, J.; Aidla, A.; Pärs, M.; Rähn, M.; Kapšai, J.; Sammelselg, V.; Wiesner, M. (2009). ALD of HfO2 on Graphene: Uniformity of Coverage and Biaxial Strain. Book of abstracts: Baltic Conference on Atomic Layer Deposition 2009; Uppsala, Sweden; June 15-16, 2009. Sweden: Uppsala Universitet, P20.
5.2.
2009
Aarik, J.; Aidla, A.; Niilisk, A.; Uustare, T.; Ritslaid, P.; Hušekova, K.; Tapajna, M.; Fröhlich, K. (2009). Capacitor Structures with Epitaxial TiO2 Films Grown by Atomic Layer Deposition on RuO2. Book of abstracts: Baltic Conference on Atomic Layer Deposition 2009; Uppsala, Sweden; June 15-16, 2009. Sweden: Uppsala Universitet, 31.
1.1.
2008
Tarre, A.; Aarik, J.; Mändar, H.; Niilisk, A.; Pärna, R.; Rammula, R.; Uustare, T.; Rosental, A.; Sammelselg, V. (2008). Atomic layer deposition of Cr2O3 thin films: Effect of crystallization on growth and properties. Applied Surface Science, 254 (16), 5149−5156. DOI: 10.1016/j.apsusc.2008.02.016.
5.2.
2008
Tarre, A.; Carlotti, G.; Gerst, A.; Mändar, H.; Niilisk, A.; Sammelselg, V.; Socino, G.; Rosental, A. (2008). C-plane chromia on c-plane sapphire. Program and Abstracts of "The 35th International Symposium on Compound Semiconductors": The 35th International Symposium on Compound Semiconductors (ISCS2008); Europa-Park, Rust, Germany; 21 - 24 September 2008. Ed. Ambacher, O. Fraunhofer Institute for Applied Solid State Physics, P42.
5.2.
2008
Niilisk, A.; Sammelselg, V.; Tarre, A.; Uustare, T.; Aarik, J. (2008). Characterization of stresses in epitaxial and polycrystalline Cr2O3 films grown by atomic layer deposition. ALD 2008 Book of Abstracts: 8th International Conference on Atomic Layer Deposition; Bruges, Belgium; June 29 - July 2, 2008. Ed. Kessels, E.; Delabie, A. Eindhoven, The Netherlands: Eindhoven University of Technology, P67 .
3.1.
2007
Aarik, J.; Kasikov, A.; Niilisk, A. (2007). Spectrophotometric and Raman spectroscopic characterization of ALD grown TiO2 thin films. Proceedings of SPIE, Advanced Optical Materials, Technologies, and Devices, 6596: 5th International Conference on Advanced Optical Materials, Technologies, and Devices; Vilnius; 27-30 August 2006. Ed. Ašmontas; S.; Gradauskas, J. Bellingham, WA: SPIE, 659616-1−659616-6. (Proceedings of SPIE). DOI: 10.1117/12.726492.
3.1.
2007
Pärna, R.; Tarre, A.; Gerst, A.; Mändar, H.; Niilisk, A.; Uustare, T.; Rosental, A.; Sammelselg, V. (2007). Influence of annealing on atomic layer deposited Cr2O3-TiO2 thin films. In: Ashmontas, S.; Gradauskas, J. (Ed.). Advanced Optical Materials, Technologies, and Devices (659618-1−659618-11). . SPIE. (Proceedings of SPIE; 6596).
5.2.
2007
Niilisk, A.; Pärs, M.; Sildos, I.; Aarik, J. (2007). Raman spectroscopy of atomic-layer-deposited metal oxide thin films. Nanotech Northern Europe 2007: Program, Abstracts, Information: Nanotechnology in Northern Europe 2007 (NTNE 2007); Helsinki, Finland; 27 - 29 March 2007. Helsingi: Spinverse Consulting, Helsinki Fair Center, 95.
5.2.
2007
Tarre, A.; Pärna, R.; Gerst, A.; Niilisk, A.; Uustare, T.; Rosental, A. (2007). ALD of Cr2O3 on alumina. Book of Abstracts: E-MRS 2007 Fall Meeting: The European Materials Research Society Fall Meeting 2007; Warsaw University of Technology, Warsaw, Poland; 17-21 September 2007. Poola: Conference Engine © pielaszek research, 102.
5.2.
2007
Niilisk, A.; Pärs, M.; Sildos, I.; Pärna, R.; Tarre, A.; Rosental, A.; Aarik, J. (2007). Raman characterization of strain in epitaxial Cr2O3 films on sapphire. Book of Abstracts: E-MRS 2007 Fall Meeting: The European Materials Research Society Fall Meeting 2007; Warsaw University of Technology, Warsaw, Poland; 17-21 September 2007. Poola: Conference Engine © pielaszek research, 100−100.
5.2.
2007
Kärkkänen, I.; Floren, A.; Mändar, H.; Uustare, T.; Niilisk, A.; Gerst, A.; Avarmaa, T.; Jaaniso, R. (2007). Sensitivity to different gases of cobalt oxide based sensors on silicon substrate. Abstracts of ICPS 2007: ICPS 2007; London; 10-16 august 2007. 74.
1.1.
2006
Niilisk, A; Moppel, M; Pärs, M; Sildos, I; Jantson, T; Avarmaa, T; Jaaniso, R; Aarik, J (2006). Structural study of TiO2 thin films by micro-Raman spectroscopy. Central European Journal of Physics, 4 (1), 105−116. DOI: 10.1007/s11534-005-0009-3.
5.2.
2006
Niilisk, A.; Pärs, M.; Sildos, I.; Aarik, J. (2006). Raman spectroscopy of atomic-layer-deposited TiO2 thin films on sapphire substrates. Technical Digest: International Conference "Northern Optics 2006"; Bergen, Norway; 14-16 June, 2006. _EditorsAbbr Arisholm, G.; Sudbö, A. Oslo, Norway: University Oslo, 106.
5.2.
2006
Niilisk, Ahti; Tarre, Aivar; Pärna, Rainer; Pärs, Martti; Mändar, Hugo; Uustare, Teet; Rosental, Arnold; Aarik, Jaan (2006). Characterization of strain in epitaxial Cr2O3 films grown on α-Al2O3 substrates. Book of Abstracts: Baltic Conference on Atomic Layer Deposition 2006 (BALD 2006); Oslo, Norway; 19-20 June, 2006. Ed. Ola Nilsen. Department of Chemistry, University of Oslo, Norway: University Oslo, P13.
5.2.
2006
Pärna, Rainer; Tarre, Aivar; Niilisk, Ahti; Rosental, Arnold; Uustare, Teet; Sammelselg, Väino (2006). Cr2O3-TiO2 nano-multilayering by high-temperature ALD. Book of Abstracts: Baltic Conference on Atomic Layer Deposition 2006 (BALD 2006); Oslo, Norway; 19-20 June, 2006. Ed. Ola Nilsen. Department of Chemistry, University of Oslo, Norway: University Oslo, P9.
5.2.
2006
Pärna, Rainer; Tarre, Aivar; Gerst, Alar; Mändar, Hugo; Niilisk, Ahti; Uustare, Teet; Rosental, Arnold; Sammelselg, Väino (2006). Influence of annealing on atomic layer deposited Cr2O3-TiO2 thin films. Program and Abstracts: 5th International Conference on Advanced Optical Materials and Devices (AOMD-5); Vilnius, Lithuania; 27-30 August, 2006. Ed. Steponas Ašmontas. Vilnius: Semiconductor Physics Institute, Lithuania, 44.
5.2.
2006
Kasikov, A.; Aarik, J.; Niilisk, A. (2006). Spectrophotometric and Raman Spectroscopic Characterization of ALD Grown TiO2 Thin Films    . Program and Abstracts: AOMD-5. 5th International Conference "Advanced Optical Materials and Devices": Vilnius, Lithuania; 27-30 August, 2006. Vilnius: Semiconductor Physics Institute, Lithuania, 40−40.
1.1.
2005
Tkachev, SN.; Manghnani, MH.; Niilisk, A.; Aarik, J.; Mandar, H. (2005). Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO2 and HfO2 thin films. Journal of Materials Science, 40 (16), 4293−4298.
1.1.
2005
Tkachev, SN.; Manghnani, MH.; Niilisk, A.; Aarik, J.; Mandar, H. (2005). Raman and Brillouin scattering spectroscopy studies of atomic layer-deposited ZrO2 and HfO2 thin films. Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 61 (10), 2434−2438.
3.1.
2005
Niilisk, A.; Aarik, J.; Uustare, T.; Mändar, H.; Tkachev, S.; Manghnani, M. (2005). A structural study of ZrO2 and HfO2 thin films grown by atomic layer deposition. Optical Materials and Applications, 5946: 4th International Conference of Advanced Optical Materials and Devices; Tartu, Estonia; July 4-6, 2004. Ed. Rosental, A. Spie - International Society For Optical Engineering, 59460E-1−59460E-8. (Proceedings of SPIE).
5.2.
2005
Niilisk, Ahti; Aarik, Jaan; Tkachev, Sergey N.; Manghnani, Murli (2005). Õhukeste oksiidkilede Ramani ja Brillouini hajumine. Eesti Füüsika Seltsi aastaraamat 2004: XXXV Eesti Füüsikapäevad; Tartu, Eesti; 22.-23. veebruar 2005. _EditorsAbbr Aret, Anna; Kuusk, Piret. Tartu: OÜ Greif, 92.
5.2.
2005
Niilisk, A.; Moppel, M.; Pärs, M.; Sildos, I.; Avarmaa, T.; Jaaniso, R.; Aarik, J. (2005). Structural study of technologically important oxide thin films by micro-Raman spectroscopy. Abstract Book: Conference on Knowledge-based Materials and Technologies for Sustainable Chemistry (MTSC); Tallinn, Estonia; 1-5 June, 2005. Tallinn, Estonia: Tallinn University of Technology, 35.
5.2.
2004
Niilisk, A.; Aarik, J.; Uustare, T.; Mändar, H.; Tkachev, S.; Manghnani, M.H. (2004). Structural study of ZrO2 and HfO2 thin films grown by atomic layer deposition. Abstracts: The Fourth International Conference on Advanced Optical Materials and Devices (AOMD-4); Tartu, Estonia; July 6-9, 2004. Ed. A. Rosental. Tartu: Tartu University Press, 41−41.
1.2.
2003
Niilisk, A; Rosental, A; Tarre, A; Uustare, T (2003). High-temperature atomic layer epitaxy of TiO2 from TiCl4 and H2O2-H2O. Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 52 (3), 257−265.
3.1.
2003
Babonas, G.; Niilisk, A.; Reza, A.; Matulis, A.; Rosental, A. (2003). Spectroscopic ellipsometry of TiO2/Si. Advanced Organic and inorganic Optical Materials. Proceedings of SPIE (50−55).. SPIE.
5.2.
2002
Niilisk, A.; Rosental, A.; Tarre, A.; Uustare, t., Sammelselg, V. (2002). High-temperature atomic layer epitaxy of TiO2 from TiCl4 and H2O2. Abstracts: 5th Baltic Symposium on Atomic Layer Deposition (BALD-5): The Fifth Baltic Symposium on Atomic Layer Deposition (BALD-5), Tartu, Estonia, Oct. 24-26, 2002. _EditorsAbbr A. Rosental. Tartu: Tartu University Press, 24.
1.1.
2001
Niilisk, A.; Rosental, A.; Uustare, T.; Kasikov, A.; Tarre, A. (2001). Chloride atomic-layer chemical vapor deposition of TiO2 with a chloride pretreatment of substrates. Journal de Physique IV, 11, 103−107.
3.1.
2001
Niilisk, A.; Rosental, A.; Gerst, A.; Sammelselg, V.; Uustare, T. (2001). Atomic-scale optical monitoring of the inital growth of TiO2 thin films. Smart Optical Inorganic Structures and Devices. Proceedings of SPIE (63−68). . SPIE.
5.2.
2001
Niilisk, A.; Rosental, A.; Mändar, H. (2001). Novel approach to low temperature atomic layer controlled growth of oxides. Book of Abstracts – 6th International Workshop on High-temperature Superconductors and Novel Inorganic Materials Engineering (MSU-HTSC VI: 6th International Workshop on High-temperature Superconductors and Novel Inorganic Materials Engineering, Moscow - St.Petersburg,June 24-30, 2001. Ed. Shpanchenko, R.V. Department of Chemistry, Moscow State University: Moscow State University, PIII-3.
1.1.
1999
Rosental, A.; Tarre, A.; Adamson, P.; Gerst, A.; Kasikov, A.; Niilisk, A. (1999). Surface of TiO2 during atomic layer deposition as determined by incremental dielectric reflection. Applied Surface Science, 142, 204−209.
1.1.
1997
Niilisk, A.; Laisaar, A. (1997). Pressure-sensitive impurity luminescence centres in 6H SiC crystals. Physica Scripta, T69, 247−249.
1.1.
1996
Rosental, A.; Adamson, P.; Gerst, A.; Niilisk, A. (1996). Monitoring of atomic layer deposition by incremental dielectric reflection. Applied Surface Science, 107, 178−183.
1.1.
1995
Niilisk, A.; Laisaar, A.; Slobodyanyuk, AV. (1995). Effect of pressure on near-infrared abc photoluminescence spectrum of 6H SiC crystal. Solid State Communications, 94 (1), 71−74.
1.1.
1995
Niilisk, A.; Laisaar, A.; Gorban, IS.; Slobodyanyuk, AV. (1995). Pressure effects on zero-phonon lines in the impurity photoluminescence spectra of 6H SiC crystals. Journal of Physics B - Atomic Molecular and Optical Physics, 56, 603−606.
3.2.
1995
Niilisk, A. (1995). Veel kord tehisteemandist. Piret Kuusk (_EditorsAbbr). Eesti Füüsika Seltsi Aastaraamat 1994 (118−119).. Tartu: OÜ Greif.
1.1.
1994
Rosental, A.; Niilisk, A. (1994). Optical in-situ characterization of deposit formation under alternate supply of diethylzinc and CO2 at room-temperature. Surface Science, 309, 1188−1192.
3.2.
1994
Niilisk, A. (1994). Tehisteemandi saamisest ja kasutamisvõimalustest. Kuusk, Piret (_EditorsAbbr). Eesti Füüsika Seltsi Aastaraamat 1993 (93−104).. Tartu: OÜ Greif.
1.1.
1993
Niilisk, A.; Laisaar, A.; Gorban, IS.; Slobodyanyuk, AV. (1993). Large pressure effect on photoluminescence lines in 6H SiC-Ti crystal. Solid State Communications, 88 (7), 537−540.
1.1.
1990
Virro, A.; Friedenthal, J.; Gerst, A.; Louk, P.; Niilisk, A.; Rosental, A. (1990). Active layer assessment of AlxGa1-xAsySb1-y/GaSb diode-lasers from hydrostatic-pressure measurements. Semiconductor Science and Technology, 5 (8), 847−853.
3.1.
1990
Friedenthal, J.; Gerst, A.; Louk, P.; Niilisk, A.; Rosental, A.; Virro, A. (1990). Effect of pressure on the properties of DH diode lasres in AlxGa1-xAsySb1-y/GaSb system. High Pressure Science and Technology. _EditorsAbbr Holzapfel, W.B.; Johannsen, P.G. London: Gordon & Breach, 60−62.
3.4.
1989
Niilisk, A.; Aarik, J.; Virro, A.; Gerst, A.; Lõuk, P.; Rosental, A.; Friedenthal, J. (1989). Effect of hydrostatic pressure on emission properties of GaSb/AlGaSb DH lasers. High Pressure Science and Technology. Kiev: Naukova Dumka, 304−308.
3.2.
1987
Aarik, J., Virro, A.; Gerst, A., Niilisk, A; Rosental, A. (1987). Luminescence of GaSb at the inversion of Gamma and L minima of the conduction band by hydrostatic pressure. Полупроводники и гетеропереходы (100−102).. Valgus.
3.2.
1987
Virro, A.; Gerst, A.; Niilisk, A.; Rosental, A.; Friedenthal, J. (1987). Effect of hydrostatic pressure on threshold current of AlGaAsSb lasers. Полупроводники и гетеропереходы (79−81).. Valgus.
1.3.
1986
Aarik, J.; Gerst, A.; Laisaar, A.; Lõuk, P.; Mugra, A.; Niilisk, A.; Rosental, A.; Friedenthal, J. (1986). Effect of hydrostatic pressure on characteristics of Ga1-xAlxAs–Ga1-yAlyAs and GaSb–Ga1-xAlxAsySb1-y heterostructure lasers. Fizika i Tekhnika Vysokih Davlenii, 21, 18−22.
1.1.
1985
Laisaar, AI.; Cholakh, SO.; Pustovarov, VA.; Niilisk, AI.; Ellervee, AF.; Polienko, AN.; Shcherbakov, VS. (1985). Comparison of the isotope, pressure, and temperature shifts in the excitonic spectra of LiH and LiD crystals. JETP Letters, 42 (10), 489−492.
1.2.
1984
Aarik, J.; Virro, A.; Gerst, A.; Lõuk, P.; Niilisk, A.; Rosental, A. (1984). Anomalous tuning of AlGaAsSb/GaSb AlGaSb/GaSb injection lasers by temperature and pressure. Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 33 (1), 35−43.
3.1.
1980
Laisaar, A.; Niilisk, A.; Mugra, A. (1980). Spectroscopic studies of local centers in crystals under hydrostatic pressure at low temperatures: molecular O2- ions in alkali halides. High Pressure Science and Technology (Proc. 7th Int. AIRAPT Conf.), vol. 2: 7th International AIRAPT Conference, Le Creusot (France), July 30 – Aug 3, 1980. Ed. Vodar, B.; Marteau, Ph. Pergamon Press, 772−775.
3.1.
1980
Laisaar, A.; Niilisk, A.; Kreingol'd, F. I.; Lider, K. F. (1980). Effect of hydrostatic pressure on the exciton absorption spectra of Cu2O crystals. High Pressure Science and. Technology (Proc. 7th Int. AIRAPT Conf.), vol 2: 7th International AIRAPT Conference; Le Creusot ( France); July 30 - Aug 3, 1980. _EditorsAbbr Vodar, B.; Marteau, Ph. Pergamon Press, 756−762.
1.1.
1978
Medvedev, VS.; Laisaar, AI.; Ermakov, VM.; Niilisk, AI.; Podolich, VB. (1978). Installation for optical investigations of materials under hydrostatic pressure up to 12 kbar in the temperature interval 4.2-300 K. Instruments and Experimental Techniques, 21 (6), 1682−1682.
3.2.
1978
Aarik, J.; Gerst, A., Laisaar, A.; Lõuk, P.; Mugra, A.; Niilisk, A.; Rosental, A. (1978). Effect of hydrostatic pressure on the threshold characteristics of GaAs-AlxGa1-xAs double heterostructure laser. Tartu Riikliku Ülikooli Toimetised (92−95).. Tartu Riiklik Ülikool. (Heterosiirded. Elektroluminestsentsi-alased tööd; VII).
3.2.
1977
Laisaar, A. I.; Lehtsalu, H. Ya ; Kirs, Ya. Ya.; Niilisk, A. I. (1977). Setup for optical studies under hydrostatic pressure up to 15 kbar. Laisaar, A. I.. Fizitcheskie issledovanija pri võsokih davlenijah (72−79).. Tallinn: Academy of Sciences of the Estonian SSR.
1.1.
1976
Niilisk, AI.; Laisaar, AI.; Mugra, AKI.; Vasilchenko, AP. (1976). Optical studies of local centers of crystals under hydrostatic-pressure at 77 K. Izvestiya Akademii Nauk SSSR Seriya Fizicheskaya, 40 (9), 1934−1938.
1.2.
1976
Niilisk, A.; Laisaar, A.; Tatarli, V.; Vasil'chenko, A. (1976). Effect of pressure on the vibronic spectra of molecular O2- and NO2- ions in alkali halides. High Temperatures - High Pressures, 8 (6), 642−643.
1.1.
1975
Mugra, AKI.; Niilisk, AI.; Osminin, VS. (1975). Effect of hydrostatic pressure on optical spectra of a KCl-Ag crystal under action of X-rays. Optika i Spektroskopiya, 39 (2), 400−402.
1.1.
1974
Niilisk, A.; Soovik, T.; Tatarly, V. (1974). Luminescence decay time for Ga+ centers in alkali-halides. physica status solidi (b), 64 (2), K135−K138.
1.1.
1974
Osminin, VS.; Zavt, GS.; Zazubovi, SG.; Niilisk, AI. (1974). Transitions with charge-transfer in Tl2+, In2+, and Ga2+ centers in KCl. Izvestiya Akademii Nauk SSSR Seriya Fizicheskaya, 38 (6), 1235−1237.
1.3.
1974
Kirs, J.; Laisaar, A.; Niilisk, A. (1974). Effect of high hydrostatic pressures on the characteristics of impurity centers in alkali halide crystals. Trudy Instituta Fiziki i Astronomii Akademii Nauk Estonskoi SSR No. 42 (25−47).. Academy of Sciences of the Estonian SSR.
5.2.
1973
Kirs, Ya. Ya.; Laisaar, A. I.; Niilisk, A. I. (1973). Study of pressure effect on the optical characteristics of impurity centers in crystals. Tezisy Dokladov: Pervoe Vsesojuznoje Soveshchanie po Fizike i Tekhnike Vysokih Davlenii, Donetsk, USSR, Sept. 5-7, 1973. _EditorsAbbr Laisaar, A. I. Academy of Sciences of the Estonian SSR, 133−133.
5.2.
1973
Lekhtsalu, H. Ya ; Laisaar, A. I.; Kirs, Ya. Ya.; Niilisk, A. I. (1973). Setup for optical and electrical measurements under hydrostatic pressure up to 15 kbar. Tezisy Dokladov: Pervoe Vsesojuznoje Soveshchanie po Fizike i Tekhnike Vysokih Davlenii, Donetsk, USSR, Sept. 5-7, 1973. _EditorsAbbr Laisaar, A. I. Academy of Sciences of the Estonian SSR, 166−166.
5.2.
1973
Niilisk, A. I.; Mugra, A. I. (1973). Effect of hydrostatic pressure on depolarization of luminescenceof impurity centres in alkali halide crystals. Tezisy Dokladov: Pervoe Vsesojuznoje Soveshchanie po Fizike i Tekhnike Vysokih Davlenii, Donetsk, USSR, Sept. 5-7, 1973. _EditorsAbbr Laisaar, A.I. Academy of Sciences of the Estonian SSR, 139−139.
5.2.
1973
Niilisk, A. I.; Kirs, Ya. Ya.; Laisaar, A. I.; Lehtsalu, H. Ya. (1973). Hydrostatic pressure induced redistribution of intensities in emission spectra of singly charged s2 ions in alkali halide crystals. Tezisy Dokladov: Pervoe Vsesojuznoje Soveshchanie po Fizike i Tekhnike Vysokih Davlenii, Donetsk, USSR, Sept. 5-7, 1973. _EditorsAbbr Laisaar, A.I. Academy of Sciences of the Estonian SSR, 138−138.
1.3.
1970
Zazubovich, S.; Niilisk, A. (1970). Luminescence depolarization of mercury-like centers in alkali halides under high hydrostatic pressures and high temperature. Trudy Instituta Fiziki i astronomii Akademii Nauk Estonskoi SSR No. 38 (163−173).. Academy of Sciences of the Estonian SSR.
1.1.
1969
Niilisk, AI.; Kirs, YY. (1969). Influence of a high hydrostatic pressure on photoelectric properties of Sb2S3 and Sb2Se3 single crystals. Soviet Physics: Semiconductors, 3 (1), 11−15.
1.1.
1969
Niilisk, A.; Laisaar, A. (1969). Spectroscopic investigation of Cu+ and Ag+ centres in alkali halides under high hydrostatic pressure. Physica Status Solidi, 33 (2), 851−861.
1.1.
1969
Niilisk, AJ.; Kirs, JJ. (1969). Photoconductivity of GaS, GaSe, and GaTe single crystals under high hydrostatic pressure. Physica Status Solidi, 31 (2), K091−K093.
1.3.
1969
Niilisk, A.; Gerst, A.; Kirs, J. (1969). Effect of pressure on luminescence and photoconductivity of cadmium sulphide single crystals. Trudy Instituta Fiziki i Astronomii Akademii Nauk Estonskoi SSR No. 36 (237−241).. Academy of Sciences of the Estonian SSR.
1.3.
1969
Zazubovich, S.; Niilisk, A. (1969). Depolarization of luminescence of alkali halide crystals doped with mercury-like impurities under high hydrostatic pressure. Trudy Instituta Fiziki i astronomii Akademii Nauk Estonskoi SSR No. 35 (251−255).. Academy of Sciences of the Estonian SSR.
1.3.
1968
Laisaar, A.; Niilisk, A. (1968). Effect of hydrostatic pressure on the luminescence of O2- impurity molecules in alkali halide phosphors. Trudy Instituta Fiziki i Astronomii Akademii Nauk Estonskoi SSR No. 37 (75−99).. Academy of Sciences of the Estonian SSR.
3.4.
1968
Plyavin, I. K.; Berzina, B.; Niilisk, A.; Tale, A.; Trinkler, M. F.; Chernyak, V. G. (1968). Inner-center electron-vibrational processes and some problems of energy transfer in activated alkali halide crystals. Proceedings of the International Conference on Luminescence 1966: International Conference on Luminescence, Budapest, Aug. 15-21, 1966. _EditorsAbbr Szigeti, G. Budapest: Academia Kiadó, 853−859.
3.2.
1967
Niilisk, A. I.; Plavin, I. (1967). Effect of hydrostatic-like compression on the intracentric luminescence of some mercury-like activators in alkali halide bases. Radiatsionnaya Fizika 5 (147−177).. Riga: Zinatne.
1.1.
1965
Niilisk, AI.; Gerst, AV.; Kirs, YY. (1965). Influence of high pressure on photoconductivity of some semiconductors. Soviet Physics: Solid State, 7 (3), 744−746.
1.3.
1962
Kirs, J.; Niilisk, A. (1962). Luminescence of alkali halide phosphors activated with Eu. Trudy Instituta Fiziki i Astronomii Akademii Nauk Estonskoi SSR No. 18 (36−50).. Academy of Sciences of the Estonian SSR.
14.05.2019

Ahti Niilisk

https://etis.ee/CV/Ahti_Niilisk/eng
10.06.1937
737 4653
ahti.niilisk@ut.ee

Career

Institutions and positions
2009–...   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Laboratory of of Thin-Film Technology, Senior Researcher (0,70)
1961-1963 Institute of Physics&Astronomy ESSR Acad.Sci. (IPhA), junior scientist; 1963-1966 IPhA, postgraduate courses;1966-1967 IPhA junior scientist; 1967-1970 IPhA, chief engineer; 1970-1971 IPhA, senior engineer; 1971-1972 IPhA, junior scientist; 1972-1973 IPhA, senior scientist; 1973-1990 Institute of Physics (IPh), ESSR Acad.Sci., senior scientist; 1990-1997 IPh, Estonian Acad. Sci., scientist; 1997-2003 IPh, University of Tartu, scientist, 2003-present IPh, University of Tartu, extraordinary senior scientist;
1980 High Pressure Research Center "Unipress", Polish Acad. Sci., visitor scientist;
2003 University of Hawaii (USA), visitor scholar;
1977 profession - senior scientist (semiconductor & dielectric physics) from the USSR Acad. Sci.
01.02.2016–31.03.2019   
University of Tartu, Faculty of Science and Technology, Institute of Physics, Consultant (0,60)
01.01.2013–31.12.2015   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow in Material Science (0,70)
01.01.2010–31.12.2012   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow (0,70)
01.09.2009–31.12.2009   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow extraordinarius (0,70)
01.04.2009–31.08.2009   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow extraordinarius (0,60)
01.02.2009–31.03.2009   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow extraordinarius (0,50)
01.01.2008–31.01.2009   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow extraordinarius (0,40)
01.01.2008–31.12.2008   
University of Perugia (Italy), visitor scientist
01.06.2007–31.12.2007   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow extraordinarius (0,80)
01.02.2007–31.05.2007   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow extraordinarius (0,50)
01.01.2007–31.01.2007   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow extraordinarius (0,80)
2007–2007   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Extraordinary Senior Researcher (0,50)
2007–2008   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Extraordinary Senior Researcher (0,80)
01.09.2005–31.12.2006   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow extraordinarius (0,80)
2005–2007   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Extraordinary Senior Researcher (0,80)
01.01.2005–31.08.2005   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow extraordinarius (0,30)
2003–2005   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Extraordinary Senior Researcher (0,90)
2003–2004   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, erakorraline vanemteadur (0,50)
 
 
Education
1955–1960   
graduated from the Tartu State University in 1960
 
 
R&D related managerial and administrative work
1995−2006   
membership of the Estonian Physics Society;
1993−2006   
participation in creation and development of the firm Evikon (Science Park of Tartu)

Qualifications

Academic degrees
Ahti Niilisk, Doctor's Degree, 1971, (sup) Jakov Kirs, Luminescence of the impurity centers in alkali halide crystals under high hydrostatic pressure, University of Tartu.
 
 
Honours & awards
1982, Ahti Niilisk, 1982 ENSV riiklik teaduspreemia (kollektiivi koosseisus) 2012 Tartu Ülikooli väike medal 2017 Tartu Ülikooli aumärk
 
 
Fields of research
ETIS CLASSIFICATION: 4. Natural Sciences and Engineering; 4.12. Process Technology and Materials Science; CERCS CLASSIFICATION: T150 Material technology ; SPECIFICATION: Raman spectroscopic study of thin oxide films and graphene
ETIS CLASSIFICATION: 4. Natural Sciences and Engineering; 4.10. Physics and Technical Physics
 
 

Completed projects

Supervised dissertations

Publications

Category
Year
Publication
 
1.1.
2016
Kodu, Margus; Berholts, Artjom; Kahro, Tauno; Avarmaa, Tea; Kasikov, Aarne; Niilisk, Ahti; Alles, Harry; Jaaniso, Raivo (2016). Highly sensitive NO2 sensors by pulsed laser deposition on graphene. Applied Physics Letters, 109, 113108.10.1063/1.4962959.
1.1.
2016
Lilloja, J.; Kibena-Põldsepp, E.; Merisalu, M.; Rauwel, P.; Matisen, L.; Niilisk, A.; Cardoso, E.S.F.; Maia, G.; Sammelselg, V.; Tammeveski, K. (2016). An oxygen reduction study of graphene-based nanomaterials of different origin. Catalysts, 6 (7), 108. DOI: 10.3390/catal6070108.
1.1.
2016
Niilisk, Ahti; Kozlova, Jekaterina; Alles, Harry; Aarik, Jaan; Sammelselg, Väino (2016). Raman characterization of stacking in multi-layer graphene grown on Ni. Carbon, 98, 658−665. DOI: 10.1016/j.carbon.2015.11.050.
5.2.
2016
Ahti, Niilisk;Jekaterina, Kozlova; Harry, Alles; Jaan, Aarik; Väino, Sammelselg (2016).

Stacking modes in multilayer graphene grown on Ni: Raman characterization

. Abstract Book: Graphene Week 2016, Warsaw,Poland,13-17 June 2016. Ed. Graphene Flagship. Warsaw: Warsaw University Press, 366.
5.2.
2016
Kodu, Kodu; Berholts, Artjom; Kahro, Tauno; Veinla, Markus; Avarmaa, Tea; Niilisk, Ahti; Alles, Harry; Jaaniso, Raivo (2016).

Laser deposition on graphene – a versatile method for developing environmental sensors

. E-MRS Spring Meeting 2016, Lille Grand Palais - France, 2-6. 05.2016. emrs, X11−X11.
1.1.
2015
Möldre, Kristel; Aarik, Lauri; Mändar, Hugo; Niilisk, Ahti; Rammula, Raul; Tarre, Aivar; Aarik, Jaan. (2015). Atomic layer deposition of rutile and TiO2-II from TiCl4 and O3 on sapphire: Influence of substrate orientation on thin film structure. Journal of Crystal Growth, 428, 86−92.10.1016/j.jcrysgro.2015.07.029.
1.1.
2015
Niilisk, Ahti; Kahro, Tauno; Kiisk, Valter; Rähn, Mihkel; Alles, Harry; Aarik, Jaan; Sammelselg, Väino (2015). Raman modes in transferred bilayer CVD graphene. Open Physics, 13 (1), 34−40. DOI: 10.1515/phys-2015-0003.
1.1.
2015
Kozlova, J.; Niilisk, A.; Alles, H.; Sammelselg, V. (2015). Discontinuity and misorientation of graphene grown on nickel foil: Effect of the substraate crystallographic orientation. Carbon, 94, 160−173. DOI: 10.1016/j.carbon.2015.06.023.
1.1.
2015
Merisalu, Maido; Kahro, Tauno; Kozlova, Jekaterina; Niilisk, Ahti; Nikolajev, Aleksandr; Marandi, Margus; Floren, Aare; Alles, Harry; Sammelselg, Väino (2015). Graphene-polypyrrole thin hybrid corrosion resistant coatings for copper. Synthetic Metals, 200, 16−23. DOI: 10.1016/j.synthmet.2014.12.024.
1.1.
2015
Mooste, M.; Kibena, E.; Kozlova, J.; Marandi, M.; Matisen, L.; Niilisk, A.; Sammelselg, V.; Tammeveski, K. (2015). Electrografting and morphological studies of chemical vapour deposition grown graphene sheets modified by electroreduction of aryldiazonium salts. Electrochimica Acta, 161, 195−204. DOI: 10.1016/j.electacta.2015.02.035.
1.1.
2015
J. Mondal, L. Aarik, J. Kozlova, A. Niilisk, H. Mändar, U. Mäeorg, A. Simões, V. Sammelselg (2015). Functionalization of Titanium Alloy Surface by Graphene Nanoplatelets and Metal Oxides: Corrosion Inhibition. Journal of Nanoscience and Nanotechnology, 15 (9), 6533−6540. DOI: 10.1166/jnn.2015.10775.
5.2.
2015
Kodu, Margus; Berholts, Artjom; Kahro, Tauno; Avarmaa, Tea; Niilisk, Ahti; Alles, Harry; Jaaniso, Raivo (2015). Gas Sensors Based on PLD-Modified Graphene for Environmental Monitoring. THIRD INTERNATIONAL ACTION WORKSHOP New Trends and Challenges for Air Quality Control, Riga, Latvia, 26-27 March 2015.
5.2.
2015
Berholts, Artjom; Kahro, Tauno; Kodu, Margus; Avarmaa, Tea; Niilisk, Ahti; Alles, Harry; Jaaniso, Raivo (2015). Functionalization of graphene by pulsed laser deposition: impact on gas sensitivity. Graphene Week 2015, Manchester, Suurbritannia, 22-26 June 2015. Graphene Flagship, 149.
1.1.
2014
Jaaniso, Raivo; Kahro, Tauno; Kozlova, Jekaterina; Aarik, Jaan; Aarik, Lauri; Alles, Harry; Floren, Aare; Gerst, Alar; Kasikov, Aarne; Niilisk, Ahti; Sammelselg, Väino (2014). Temperature induced inversion of oxygen response in CVD graphene on SiO2. Sensors and Actuators B-Chemical, 190, 1006−1013. DOI: 10.1016/j.snb.2013.09.068.
1.2.
2014
Mondal, J.; Marandi, M.; Kozlova, J.; Merisalu, M.; Niilisk, A.; Sammelselg, V. (2014). Protection and Functionalizing of Stainless Steel Surface by Graphene Oxide-Polypyrrole Composite Coating. Journal of Chemistry and Chemical Engineering, 8, 786−793. DOI: 10.17265/1934-7375/2014.08.005.
5.2.
2014
Niilisk, Ahti; Kahro, Tauno; Alles, Harry; Aarik, Jaan; Sammelselg, Väino (2014). Breathing modes in Raman of CVD grown twisted bilayer graphene. e-Abstract Book: Graphene Week 2014, Gothenburg, Sweden, 23-27 June 2014. Ed. Sergey Kubatkin, Jan Stake. Gothenburg: Chalmers University of Technology, 282−282.
1.1.
2013
Tarre, Aivar; Möldre, Kristel; Niilisk, Ahti; Mändar, Hugo; Aarik, Jaan; Rosental, Arnold (2013). Atomic layer deposition of epitaxial TiO2 II on c-sapphire. Journal of Vacuum Science & Technology A: Vacuum Surfaces and Films, 31 (1), 01A118-1−01A118-5.10.1116/1.4764892.
3.1.
2013
Rammula, Raul; Aarik, Lauri; Kasikov, Arne; Kozlova, Jekaterina; Kahro, Tauno; Matisen, Leonard; Niilisk, Ahti; Alles, Harry; Aarik, Jaan (2013). Atomic layer deposition of aluminum oxide films on graphene. IOP Conference Series: Materials Science and Engineering, 49, 012014.10.1088/1757-899X/49/1/012014.
5.2.
2013
Tamm, A.; Kahro, T.; Kozlova, J.; Aarik, L.; Kasikov, A.; Mändar, H.; Rammula, R.; Niilisk, A.; Möldre, K.; Tarre, A.; Alles, H.; Kukli, K.; Aarik, J. (2013). Aatomkihtsadestud dielektikute uurimine grafeeni sisaldavas struktuuris. EMRS-2013, SPRING 13 symposium N: Atomic-scale engineering of multifunctional nano-sized materials and films: EMRS-2013, Strasbourg, Prantsusmaa, mai 2013. x, x.
5.2.
2013
Möldre, Kristel; Tarre, Aivar; Adamson, Peep; Kahro, Tauno; Niilisk, Ahti; Aarik, Jaan (2013). Real-Time Optical Characterization of Atomic Layer Deposition of Dielectrics on Graphene. Book of Abstracts: International Conference "Functional Materials and Nanotechnologies 2013 - FM&NT2013"; Tartu, Estonia; April 21-24, 2013. _EditorsAbbr Plank, Toomas; Pärna, Rainer. Institute of Physics, University of Tartu, 223.
5.2.
2012
Arroval, Tõnis; Vetemäe, Lagle: Mändar, Hugo; Niilisk, Ahti; and Aarik, Jaan (2012). Comparison of TiO2 thin films grown by atomic layer deposition in TiCl4-H2O and TTIP-H2O processes. Book of Abstracts: The 12th International Conference on Atomic Layer Deposition "AVS-ALD & Baltic ALD 2012", Dresden, Germany, June 17-20, 2012. Ed. Uwe Schröder and Mato Knez. Namlab gGmbH, Dresden, 242.
5.2.
2012
Tarre, Aivar; Möldre, Kristel; Niilisk, Ahti; Mändar, Hugo; Aarik, Jaan; and Rosental, Arnold (2012). Atomic layer deposition of TiO2 II on α-Al2O3(001). Book of Abstracts: The 12th International Conference on Atomic Layer Deposition "AVS-ALD & Baltic ALD 2012", Dresden, Germany, June 17-20, 2012. Ed. Uwe Schröder and Mato Knez. Namlab gGmbH, Dresden, 240.
1.1.
2011
Alles, H.; Aarik, J.; Aidla, A.; Fay, A.; Kozlova, J.; Niilisk, A.; Pärs, M.; Rähn, M.; Wiesner, M.; Hakonen, P.; Sammelselg, V. (2011). Atomic layer deposition of HfO2 on graphene from HfCl4 and H2O. Central European Journal of Physics, 9 (2), 319−324. DOI: 10.2478/s11534-010-0040-x.
3.2.
2011
Alles, H.; Aarik, J.; Kozlova, J.; Niilisk, A.; Rammula, R.; Sammelselg, V. (2011). Atomic layer deposition of high-k oxides on graphene. In: Jian Ru Gong (Ed.). Graphene - Synthesis, Characterization, Properties and Applications (99−114). . INTECH.
1.1.
2010
Sammelselg, V.; Tarre, A.; Lu, J.; Aarik, J.; Niilisk, A.; Uustare, T.; Netšipailo, I.; Rammula, R.; Pärna, R.; Rosental, A. (2010). Structural characterization of TiO2–Cr2O3 nanolaminates grown by atomic layer deposition. Surface and Coatings Technology, 204, 2015−2018. DOI: 10.1016/j.surfcoat.2009.11.039.
5.2.
2010
Niilisk, A.; Aidla, A.; Kukli, K.; Mändar, H.; Matisen, L.; Saar, A.; Aarik, J. (2010). Raman characterization of Ru thin films growwn by ALD. Conference Program & Abstract Booklet: Baltic ALD 2010 & GerALD 2010; Bucerius Law School, Hamburg, Germany, September 16-17, 2010. Hamburg, Germany, P36.
5.2.
2010
Alles, H.; Aarik, J.; Aidla, A.; Fay, A.; Kozlova, J.; Niilisk, A.; Pärs, M.; Rähn, M.; Wiesner, M.; Hakonen, P.; Sammelselg, V. (2010). Atomic layer deposition of monoclinic HfO2 films on graphene. In: Proceedings of Graphene Week (electronical form): Graphene Week, Maryland, USA, April 19-23, 2010. W006.
3.1.
2009
Tarre, A.; Carlotti, G.; Gerst, A.; Mändar, H.; Niilisk, A.; Sammelselg, V.; Socino, G.; Rosental, A. (2009). C-plane chromia on c-plane sapphire. physica status solidi (c), 6 (6), 1472−1475. DOI: 10.1002/pssc.200881530.
5.2.
2009
Alles, H.; Aarik, J.; Aidla, A.; Niilisk, A.; Pärs, M.; Rähn, M.; Kozlova, J.; Sammelselg, V. (2009). Biaxial strain caused by atomic layer deposition of HfO2 and TiO2 thin films on graphene. Nanoscience Days October 29-30, 2009: Nanoscience Days 2009; Jyväskylä, Finland; October 29-30, 2009. Ed. Nanoscience Center. Finland: Jyväskylan yliopisto, 38.
5.2.
2009
Niilisk, A.; Alles, H.; Aarik, J.; Aidla, A.; Pärs, M.; Rähn, M.; Kapšai, J.; Sammelselg, V.; Wiesner, M. (2009). ALD of HfO2 on Graphene: Uniformity of Coverage and Biaxial Strain. Book of abstracts: Baltic Conference on Atomic Layer Deposition 2009; Uppsala, Sweden; June 15-16, 2009. Sweden: Uppsala Universitet, P20.
5.2.
2009
Aarik, J.; Aidla, A.; Niilisk, A.; Uustare, T.; Ritslaid, P.; Hušekova, K.; Tapajna, M.; Fröhlich, K. (2009). Capacitor Structures with Epitaxial TiO2 Films Grown by Atomic Layer Deposition on RuO2. Book of abstracts: Baltic Conference on Atomic Layer Deposition 2009; Uppsala, Sweden; June 15-16, 2009. Sweden: Uppsala Universitet, 31.
1.1.
2008
Tarre, A.; Aarik, J.; Mändar, H.; Niilisk, A.; Pärna, R.; Rammula, R.; Uustare, T.; Rosental, A.; Sammelselg, V. (2008). Atomic layer deposition of Cr2O3 thin films: Effect of crystallization on growth and properties. Applied Surface Science, 254 (16), 5149−5156. DOI: 10.1016/j.apsusc.2008.02.016.
5.2.
2008
Tarre, A.; Carlotti, G.; Gerst, A.; Mändar, H.; Niilisk, A.; Sammelselg, V.; Socino, G.; Rosental, A. (2008). C-plane chromia on c-plane sapphire. Program and Abstracts of "The 35th International Symposium on Compound Semiconductors": The 35th International Symposium on Compound Semiconductors (ISCS2008); Europa-Park, Rust, Germany; 21 - 24 September 2008. Ed. Ambacher, O. Fraunhofer Institute for Applied Solid State Physics, P42.
5.2.
2008
Niilisk, A.; Sammelselg, V.; Tarre, A.; Uustare, T.; Aarik, J. (2008). Characterization of stresses in epitaxial and polycrystalline Cr2O3 films grown by atomic layer deposition. ALD 2008 Book of Abstracts: 8th International Conference on Atomic Layer Deposition; Bruges, Belgium; June 29 - July 2, 2008. Ed. Kessels, E.; Delabie, A. Eindhoven, The Netherlands: Eindhoven University of Technology, P67 .
3.1.
2007
Aarik, J.; Kasikov, A.; Niilisk, A. (2007). Spectrophotometric and Raman spectroscopic characterization of ALD grown TiO2 thin films. Proceedings of SPIE, Advanced Optical Materials, Technologies, and Devices, 6596: 5th International Conference on Advanced Optical Materials, Technologies, and Devices; Vilnius; 27-30 August 2006. Ed. Ašmontas; S.; Gradauskas, J. Bellingham, WA: SPIE, 659616-1−659616-6. (Proceedings of SPIE). DOI: 10.1117/12.726492.
3.1.
2007
Pärna, R.; Tarre, A.; Gerst, A.; Mändar, H.; Niilisk, A.; Uustare, T.; Rosental, A.; Sammelselg, V. (2007). Influence of annealing on atomic layer deposited Cr2O3-TiO2 thin films. In: Ashmontas, S.; Gradauskas, J. (Ed.). Advanced Optical Materials, Technologies, and Devices (659618-1−659618-11). . SPIE. (Proceedings of SPIE; 6596).
5.2.
2007
Niilisk, A.; Pärs, M.; Sildos, I.; Aarik, J. (2007). Raman spectroscopy of atomic-layer-deposited metal oxide thin films. Nanotech Northern Europe 2007: Program, Abstracts, Information: Nanotechnology in Northern Europe 2007 (NTNE 2007); Helsinki, Finland; 27 - 29 March 2007. Helsingi: Spinverse Consulting, Helsinki Fair Center, 95.
5.2.
2007
Tarre, A.; Pärna, R.; Gerst, A.; Niilisk, A.; Uustare, T.; Rosental, A. (2007). ALD of Cr2O3 on alumina. Book of Abstracts: E-MRS 2007 Fall Meeting: The European Materials Research Society Fall Meeting 2007; Warsaw University of Technology, Warsaw, Poland; 17-21 September 2007. Poola: Conference Engine © pielaszek research, 102.
5.2.
2007
Niilisk, A.; Pärs, M.; Sildos, I.; Pärna, R.; Tarre, A.; Rosental, A.; Aarik, J. (2007). Raman characterization of strain in epitaxial Cr2O3 films on sapphire. Book of Abstracts: E-MRS 2007 Fall Meeting: The European Materials Research Society Fall Meeting 2007; Warsaw University of Technology, Warsaw, Poland; 17-21 September 2007. Poola: Conference Engine © pielaszek research, 100−100.
5.2.
2007
Kärkkänen, I.; Floren, A.; Mändar, H.; Uustare, T.; Niilisk, A.; Gerst, A.; Avarmaa, T.; Jaaniso, R. (2007). Sensitivity to different gases of cobalt oxide based sensors on silicon substrate. Abstracts of ICPS 2007: ICPS 2007; London; 10-16 august 2007. 74.
1.1.
2006
Niilisk, A; Moppel, M; Pärs, M; Sildos, I; Jantson, T; Avarmaa, T; Jaaniso, R; Aarik, J (2006). Structural study of TiO2 thin films by micro-Raman spectroscopy. Central European Journal of Physics, 4 (1), 105−116. DOI: 10.1007/s11534-005-0009-3.
5.2.
2006
Niilisk, A.; Pärs, M.; Sildos, I.; Aarik, J. (2006). Raman spectroscopy of atomic-layer-deposited TiO2 thin films on sapphire substrates. Technical Digest: International Conference "Northern Optics 2006"; Bergen, Norway; 14-16 June, 2006. _EditorsAbbr Arisholm, G.; Sudbö, A. Oslo, Norway: University Oslo, 106.
5.2.
2006
Niilisk, Ahti; Tarre, Aivar; Pärna, Rainer; Pärs, Martti; Mändar, Hugo; Uustare, Teet; Rosental, Arnold; Aarik, Jaan (2006). Characterization of strain in epitaxial Cr2O3 films grown on α-Al2O3 substrates. Book of Abstracts: Baltic Conference on Atomic Layer Deposition 2006 (BALD 2006); Oslo, Norway; 19-20 June, 2006. Ed. Ola Nilsen. Department of Chemistry, University of Oslo, Norway: University Oslo, P13.
5.2.
2006
Pärna, Rainer; Tarre, Aivar; Niilisk, Ahti; Rosental, Arnold; Uustare, Teet; Sammelselg, Väino (2006). Cr2O3-TiO2 nano-multilayering by high-temperature ALD. Book of Abstracts: Baltic Conference on Atomic Layer Deposition 2006 (BALD 2006); Oslo, Norway; 19-20 June, 2006. Ed. Ola Nilsen. Department of Chemistry, University of Oslo, Norway: University Oslo, P9.
5.2.
2006
Pärna, Rainer; Tarre, Aivar; Gerst, Alar; Mändar, Hugo; Niilisk, Ahti; Uustare, Teet; Rosental, Arnold; Sammelselg, Väino (2006). Influence of annealing on atomic layer deposited Cr2O3-TiO2 thin films. Program and Abstracts: 5th International Conference on Advanced Optical Materials and Devices (AOMD-5); Vilnius, Lithuania; 27-30 August, 2006. Ed. Steponas Ašmontas. Vilnius: Semiconductor Physics Institute, Lithuania, 44.
5.2.
2006
Kasikov, A.; Aarik, J.; Niilisk, A. (2006). Spectrophotometric and Raman Spectroscopic Characterization of ALD Grown TiO2 Thin Films    . Program and Abstracts: AOMD-5. 5th International Conference "Advanced Optical Materials and Devices": Vilnius, Lithuania; 27-30 August, 2006. Vilnius: Semiconductor Physics Institute, Lithuania, 40−40.
1.1.
2005
Tkachev, SN.; Manghnani, MH.; Niilisk, A.; Aarik, J.; Mandar, H. (2005). Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO2 and HfO2 thin films. Journal of Materials Science, 40 (16), 4293−4298.
1.1.
2005
Tkachev, SN.; Manghnani, MH.; Niilisk, A.; Aarik, J.; Mandar, H. (2005). Raman and Brillouin scattering spectroscopy studies of atomic layer-deposited ZrO2 and HfO2 thin films. Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 61 (10), 2434−2438.
3.1.
2005
Niilisk, A.; Aarik, J.; Uustare, T.; Mändar, H.; Tkachev, S.; Manghnani, M. (2005). A structural study of ZrO2 and HfO2 thin films grown by atomic layer deposition. Optical Materials and Applications, 5946: 4th International Conference of Advanced Optical Materials and Devices; Tartu, Estonia; July 4-6, 2004. Ed. Rosental, A. Spie - International Society For Optical Engineering, 59460E-1−59460E-8. (Proceedings of SPIE).
5.2.
2005
Niilisk, Ahti; Aarik, Jaan; Tkachev, Sergey N.; Manghnani, Murli (2005). Õhukeste oksiidkilede Ramani ja Brillouini hajumine. Eesti Füüsika Seltsi aastaraamat 2004: XXXV Eesti Füüsikapäevad; Tartu, Eesti; 22.-23. veebruar 2005. _EditorsAbbr Aret, Anna; Kuusk, Piret. Tartu: OÜ Greif, 92.
5.2.
2005
Niilisk, A.; Moppel, M.; Pärs, M.; Sildos, I.; Avarmaa, T.; Jaaniso, R.; Aarik, J. (2005). Structural study of technologically important oxide thin films by micro-Raman spectroscopy. Abstract Book: Conference on Knowledge-based Materials and Technologies for Sustainable Chemistry (MTSC); Tallinn, Estonia; 1-5 June, 2005. Tallinn, Estonia: Tallinn University of Technology, 35.
5.2.
2004
Niilisk, A.; Aarik, J.; Uustare, T.; Mändar, H.; Tkachev, S.; Manghnani, M.H. (2004). Structural study of ZrO2 and HfO2 thin films grown by atomic layer deposition. Abstracts: The Fourth International Conference on Advanced Optical Materials and Devices (AOMD-4); Tartu, Estonia; July 6-9, 2004. Ed. A. Rosental. Tartu: Tartu University Press, 41−41.
1.2.
2003
Niilisk, A; Rosental, A; Tarre, A; Uustare, T (2003). High-temperature atomic layer epitaxy of TiO2 from TiCl4 and H2O2-H2O. Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 52 (3), 257−265.
3.1.
2003
Babonas, G.; Niilisk, A.; Reza, A.; Matulis, A.; Rosental, A. (2003). Spectroscopic ellipsometry of TiO2/Si. Advanced Organic and inorganic Optical Materials. Proceedings of SPIE (50−55).. SPIE.
5.2.
2002
Niilisk, A.; Rosental, A.; Tarre, A.; Uustare, t., Sammelselg, V. (2002). High-temperature atomic layer epitaxy of TiO2 from TiCl4 and H2O2. Abstracts: 5th Baltic Symposium on Atomic Layer Deposition (BALD-5): The Fifth Baltic Symposium on Atomic Layer Deposition (BALD-5), Tartu, Estonia, Oct. 24-26, 2002. _EditorsAbbr A. Rosental. Tartu: Tartu University Press, 24.
1.1.
2001
Niilisk, A.; Rosental, A.; Uustare, T.; Kasikov, A.; Tarre, A. (2001). Chloride atomic-layer chemical vapor deposition of TiO2 with a chloride pretreatment of substrates. Journal de Physique IV, 11, 103−107.
3.1.
2001
Niilisk, A.; Rosental, A.; Gerst, A.; Sammelselg, V.; Uustare, T. (2001). Atomic-scale optical monitoring of the inital growth of TiO2 thin films. Smart Optical Inorganic Structures and Devices. Proceedings of SPIE (63−68). . SPIE.
5.2.
2001
Niilisk, A.; Rosental, A.; Mändar, H. (2001). Novel approach to low temperature atomic layer controlled growth of oxides. Book of Abstracts – 6th International Workshop on High-temperature Superconductors and Novel Inorganic Materials Engineering (MSU-HTSC VI: 6th International Workshop on High-temperature Superconductors and Novel Inorganic Materials Engineering, Moscow - St.Petersburg,June 24-30, 2001. Ed. Shpanchenko, R.V. Department of Chemistry, Moscow State University: Moscow State University, PIII-3.
1.1.
1999
Rosental, A.; Tarre, A.; Adamson, P.; Gerst, A.; Kasikov, A.; Niilisk, A. (1999). Surface of TiO2 during atomic layer deposition as determined by incremental dielectric reflection. Applied Surface Science, 142, 204−209.
1.1.
1997
Niilisk, A.; Laisaar, A. (1997). Pressure-sensitive impurity luminescence centres in 6H SiC crystals. Physica Scripta, T69, 247−249.
1.1.
1996
Rosental, A.; Adamson, P.; Gerst, A.; Niilisk, A. (1996). Monitoring of atomic layer deposition by incremental dielectric reflection. Applied Surface Science, 107, 178−183.
1.1.
1995
Niilisk, A.; Laisaar, A.; Slobodyanyuk, AV. (1995). Effect of pressure on near-infrared abc photoluminescence spectrum of 6H SiC crystal. Solid State Communications, 94 (1), 71−74.
1.1.
1995
Niilisk, A.; Laisaar, A.; Gorban, IS.; Slobodyanyuk, AV. (1995). Pressure effects on zero-phonon lines in the impurity photoluminescence spectra of 6H SiC crystals. Journal of Physics B - Atomic Molecular and Optical Physics, 56, 603−606.
3.2.
1995
Niilisk, A. (1995). Veel kord tehisteemandist. Piret Kuusk (_EditorsAbbr). Eesti Füüsika Seltsi Aastaraamat 1994 (118−119).. Tartu: OÜ Greif.
1.1.
1994
Rosental, A.; Niilisk, A. (1994). Optical in-situ characterization of deposit formation under alternate supply of diethylzinc and CO2 at room-temperature. Surface Science, 309, 1188−1192.
3.2.
1994
Niilisk, A. (1994). Tehisteemandi saamisest ja kasutamisvõimalustest. Kuusk, Piret (_EditorsAbbr). Eesti Füüsika Seltsi Aastaraamat 1993 (93−104).. Tartu: OÜ Greif.
1.1.
1993
Niilisk, A.; Laisaar, A.; Gorban, IS.; Slobodyanyuk, AV. (1993). Large pressure effect on photoluminescence lines in 6H SiC-Ti crystal. Solid State Communications, 88 (7), 537−540.
1.1.
1990
Virro, A.; Friedenthal, J.; Gerst, A.; Louk, P.; Niilisk, A.; Rosental, A. (1990). Active layer assessment of AlxGa1-xAsySb1-y/GaSb diode-lasers from hydrostatic-pressure measurements. Semiconductor Science and Technology, 5 (8), 847−853.
3.1.
1990
Friedenthal, J.; Gerst, A.; Louk, P.; Niilisk, A.; Rosental, A.; Virro, A. (1990). Effect of pressure on the properties of DH diode lasres in AlxGa1-xAsySb1-y/GaSb system. High Pressure Science and Technology. _EditorsAbbr Holzapfel, W.B.; Johannsen, P.G. London: Gordon & Breach, 60−62.
3.4.
1989
Niilisk, A.; Aarik, J.; Virro, A.; Gerst, A.; Lõuk, P.; Rosental, A.; Friedenthal, J. (1989). Effect of hydrostatic pressure on emission properties of GaSb/AlGaSb DH lasers. High Pressure Science and Technology. Kiev: Naukova Dumka, 304−308.
3.2.
1987
Aarik, J., Virro, A.; Gerst, A., Niilisk, A; Rosental, A. (1987). Luminescence of GaSb at the inversion of Gamma and L minima of the conduction band by hydrostatic pressure. Полупроводники и гетеропереходы (100−102).. Valgus.
3.2.
1987
Virro, A.; Gerst, A.; Niilisk, A.; Rosental, A.; Friedenthal, J. (1987). Effect of hydrostatic pressure on threshold current of AlGaAsSb lasers. Полупроводники и гетеропереходы (79−81).. Valgus.
1.3.
1986
Aarik, J.; Gerst, A.; Laisaar, A.; Lõuk, P.; Mugra, A.; Niilisk, A.; Rosental, A.; Friedenthal, J. (1986). Effect of hydrostatic pressure on characteristics of Ga1-xAlxAs–Ga1-yAlyAs and GaSb–Ga1-xAlxAsySb1-y heterostructure lasers. Fizika i Tekhnika Vysokih Davlenii, 21, 18−22.
1.1.
1985
Laisaar, AI.; Cholakh, SO.; Pustovarov, VA.; Niilisk, AI.; Ellervee, AF.; Polienko, AN.; Shcherbakov, VS. (1985). Comparison of the isotope, pressure, and temperature shifts in the excitonic spectra of LiH and LiD crystals. JETP Letters, 42 (10), 489−492.
1.2.
1984
Aarik, J.; Virro, A.; Gerst, A.; Lõuk, P.; Niilisk, A.; Rosental, A. (1984). Anomalous tuning of AlGaAsSb/GaSb AlGaSb/GaSb injection lasers by temperature and pressure. Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 33 (1), 35−43.
3.1.
1980
Laisaar, A.; Niilisk, A.; Mugra, A. (1980). Spectroscopic studies of local centers in crystals under hydrostatic pressure at low temperatures: molecular O2- ions in alkali halides. High Pressure Science and Technology (Proc. 7th Int. AIRAPT Conf.), vol. 2: 7th International AIRAPT Conference, Le Creusot (France), July 30 – Aug 3, 1980. Ed. Vodar, B.; Marteau, Ph. Pergamon Press, 772−775.
3.1.
1980
Laisaar, A.; Niilisk, A.; Kreingol'd, F. I.; Lider, K. F. (1980). Effect of hydrostatic pressure on the exciton absorption spectra of Cu2O crystals. High Pressure Science and. Technology (Proc. 7th Int. AIRAPT Conf.), vol 2: 7th International AIRAPT Conference; Le Creusot ( France); July 30 - Aug 3, 1980. _EditorsAbbr Vodar, B.; Marteau, Ph. Pergamon Press, 756−762.
1.1.
1978
Medvedev, VS.; Laisaar, AI.; Ermakov, VM.; Niilisk, AI.; Podolich, VB. (1978). Installation for optical investigations of materials under hydrostatic pressure up to 12 kbar in the temperature interval 4.2-300 K. Instruments and Experimental Techniques, 21 (6), 1682−1682.
3.2.
1978
Aarik, J.; Gerst, A., Laisaar, A.; Lõuk, P.; Mugra, A.; Niilisk, A.; Rosental, A. (1978). Effect of hydrostatic pressure on the threshold characteristics of GaAs-AlxGa1-xAs double heterostructure laser. Tartu Riikliku Ülikooli Toimetised (92−95).. Tartu Riiklik Ülikool. (Heterosiirded. Elektroluminestsentsi-alased tööd; VII).
3.2.
1977
Laisaar, A. I.; Lehtsalu, H. Ya ; Kirs, Ya. Ya.; Niilisk, A. I. (1977). Setup for optical studies under hydrostatic pressure up to 15 kbar. Laisaar, A. I.. Fizitcheskie issledovanija pri võsokih davlenijah (72−79).. Tallinn: Academy of Sciences of the Estonian SSR.
1.1.
1976
Niilisk, AI.; Laisaar, AI.; Mugra, AKI.; Vasilchenko, AP. (1976). Optical studies of local centers of crystals under hydrostatic-pressure at 77 K. Izvestiya Akademii Nauk SSSR Seriya Fizicheskaya, 40 (9), 1934−1938.
1.2.
1976
Niilisk, A.; Laisaar, A.; Tatarli, V.; Vasil'chenko, A. (1976). Effect of pressure on the vibronic spectra of molecular O2- and NO2- ions in alkali halides. High Temperatures - High Pressures, 8 (6), 642−643.
1.1.
1975
Mugra, AKI.; Niilisk, AI.; Osminin, VS. (1975). Effect of hydrostatic pressure on optical spectra of a KCl-Ag crystal under action of X-rays. Optika i Spektroskopiya, 39 (2), 400−402.
1.1.
1974
Niilisk, A.; Soovik, T.; Tatarly, V. (1974). Luminescence decay time for Ga+ centers in alkali-halides. physica status solidi (b), 64 (2), K135−K138.
1.1.
1974
Osminin, VS.; Zavt, GS.; Zazubovi, SG.; Niilisk, AI. (1974). Transitions with charge-transfer in Tl2+, In2+, and Ga2+ centers in KCl. Izvestiya Akademii Nauk SSSR Seriya Fizicheskaya, 38 (6), 1235−1237.
1.3.
1974
Kirs, J.; Laisaar, A.; Niilisk, A. (1974). Effect of high hydrostatic pressures on the characteristics of impurity centers in alkali halide crystals. Trudy Instituta Fiziki i Astronomii Akademii Nauk Estonskoi SSR No. 42 (25−47).. Academy of Sciences of the Estonian SSR.
5.2.
1973
Kirs, Ya. Ya.; Laisaar, A. I.; Niilisk, A. I. (1973). Study of pressure effect on the optical characteristics of impurity centers in crystals. Tezisy Dokladov: Pervoe Vsesojuznoje Soveshchanie po Fizike i Tekhnike Vysokih Davlenii, Donetsk, USSR, Sept. 5-7, 1973. _EditorsAbbr Laisaar, A. I. Academy of Sciences of the Estonian SSR, 133−133.
5.2.
1973
Lekhtsalu, H. Ya ; Laisaar, A. I.; Kirs, Ya. Ya.; Niilisk, A. I. (1973). Setup for optical and electrical measurements under hydrostatic pressure up to 15 kbar. Tezisy Dokladov: Pervoe Vsesojuznoje Soveshchanie po Fizike i Tekhnike Vysokih Davlenii, Donetsk, USSR, Sept. 5-7, 1973. _EditorsAbbr Laisaar, A. I. Academy of Sciences of the Estonian SSR, 166−166.
5.2.
1973
Niilisk, A. I.; Mugra, A. I. (1973). Effect of hydrostatic pressure on depolarization of luminescenceof impurity centres in alkali halide crystals. Tezisy Dokladov: Pervoe Vsesojuznoje Soveshchanie po Fizike i Tekhnike Vysokih Davlenii, Donetsk, USSR, Sept. 5-7, 1973. _EditorsAbbr Laisaar, A.I. Academy of Sciences of the Estonian SSR, 139−139.
5.2.
1973
Niilisk, A. I.; Kirs, Ya. Ya.; Laisaar, A. I.; Lehtsalu, H. Ya. (1973). Hydrostatic pressure induced redistribution of intensities in emission spectra of singly charged s2 ions in alkali halide crystals. Tezisy Dokladov: Pervoe Vsesojuznoje Soveshchanie po Fizike i Tekhnike Vysokih Davlenii, Donetsk, USSR, Sept. 5-7, 1973. _EditorsAbbr Laisaar, A.I. Academy of Sciences of the Estonian SSR, 138−138.
1.3.
1970
Zazubovich, S.; Niilisk, A. (1970). Luminescence depolarization of mercury-like centers in alkali halides under high hydrostatic pressures and high temperature. Trudy Instituta Fiziki i astronomii Akademii Nauk Estonskoi SSR No. 38 (163−173).. Academy of Sciences of the Estonian SSR.
1.1.
1969
Niilisk, AI.; Kirs, YY. (1969). Influence of a high hydrostatic pressure on photoelectric properties of Sb2S3 and Sb2Se3 single crystals. Soviet Physics: Semiconductors, 3 (1), 11−15.
1.1.
1969
Niilisk, A.; Laisaar, A. (1969). Spectroscopic investigation of Cu+ and Ag+ centres in alkali halides under high hydrostatic pressure. Physica Status Solidi, 33 (2), 851−861.
1.1.
1969
Niilisk, AJ.; Kirs, JJ. (1969). Photoconductivity of GaS, GaSe, and GaTe single crystals under high hydrostatic pressure. Physica Status Solidi, 31 (2), K091−K093.
1.3.
1969
Niilisk, A.; Gerst, A.; Kirs, J. (1969). Effect of pressure on luminescence and photoconductivity of cadmium sulphide single crystals. Trudy Instituta Fiziki i Astronomii Akademii Nauk Estonskoi SSR No. 36 (237−241).. Academy of Sciences of the Estonian SSR.
1.3.
1969
Zazubovich, S.; Niilisk, A. (1969). Depolarization of luminescence of alkali halide crystals doped with mercury-like impurities under high hydrostatic pressure. Trudy Instituta Fiziki i astronomii Akademii Nauk Estonskoi SSR No. 35 (251−255).. Academy of Sciences of the Estonian SSR.
1.3.
1968
Laisaar, A.; Niilisk, A. (1968). Effect of hydrostatic pressure on the luminescence of O2- impurity molecules in alkali halide phosphors. Trudy Instituta Fiziki i Astronomii Akademii Nauk Estonskoi SSR No. 37 (75−99).. Academy of Sciences of the Estonian SSR.
3.4.
1968
Plyavin, I. K.; Berzina, B.; Niilisk, A.; Tale, A.; Trinkler, M. F.; Chernyak, V. G. (1968). Inner-center electron-vibrational processes and some problems of energy transfer in activated alkali halide crystals. Proceedings of the International Conference on Luminescence 1966: International Conference on Luminescence, Budapest, Aug. 15-21, 1966. _EditorsAbbr Szigeti, G. Budapest: Academia Kiadó, 853−859.
3.2.
1967
Niilisk, A. I.; Plavin, I. (1967). Effect of hydrostatic-like compression on the intracentric luminescence of some mercury-like activators in alkali halide bases. Radiatsionnaya Fizika 5 (147−177).. Riga: Zinatne.
1.1.
1965
Niilisk, AI.; Gerst, AV.; Kirs, YY. (1965). Influence of high pressure on photoconductivity of some semiconductors. Soviet Physics: Solid State, 7 (3), 744−746.
1.3.
1962
Kirs, J.; Niilisk, A. (1962). Luminescence of alkali halide phosphors activated with Eu. Trudy Instituta Fiziki i Astronomii Akademii Nauk Estonskoi SSR No. 18 (36−50).. Academy of Sciences of the Estonian SSR.
14.05.2019

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